IDT12S60C_08

IDT12S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 5mA2) Product Summary V DC Qc IF 600 30 12 V nC A PG-TO220-2-2 thinQ! 2G Diode specially designed for fast switching applications like: • CCM PFC • Motor Drives Type IDT12S60C Package PG-TO220-2-2 Marking D12S60C Pin 1 C Pin 2 A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous forward current RMS forward current Symbol Conditions IF I F,RMS T C