IPU039N03LG

Type IPF039N03L G IPU039N03L G OptiMOS®3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • Pb-free plating; RoHS compliant Type IPF039N03L G IPU039N03L G 1) Product Summary V DS R DS(on),max ID 30 3.9 50 V mΩ A Package Marking PG-TO252-3-23 039N03L PG-TO251-3-21 039N03L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C Pulsed drain current2) Avalanche current, single pulse 3) Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage 1) Value 50 50 50 50 350 50 115 6 ±20 Unit A I D,pulse I AS E AS dv /dt V GS T C=25 °C T C=25 °C I D=50 A, R GS=25 Ω I D=50 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 °C mJ kV/µs V J-STD20 and JESD22 Rev. 0.9 target datasheet page 1 2006-10-23 IPF039N03L G IPU039N03L G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Symbol Conditions P tot T j, T stg T C=25 °C Value 94 -55 ... 175 55/175/56 Unit W °C Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm² cooling area 4) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=250 µA V DS=30 V, V GS=0 V, T j=25 °C V DS=30 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance 5) - - 1.6 75 50 K/W 30 1 - 0.1 2.2 1 V µA - 10 10 4.2 3.3 1.6 96 100 100 5.2 3.9 Ω S nA mΩ I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=30 A V GS=10 V, I D=30 A Gate resistance Transconductance 2) 3) 4) RG g fs |V DS|>2|I D|R DS(on)max, I D=30 A 48 See figure 3 for more detailed information See figure 13 for more detailed information Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 5) Measured from drain tab to source pin Rev. 0.9 target datasheet page 2 2006-10-23 IPF039N03L G IPU039N03L G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 6) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total Q gs Q g(th) Q gd Q sw Qg V plateau Qg V DD=15 V, I D=30 A, V GS=0 to 10 V V DS=0.1 V, V GS=0 to 4.5 V V DD=15 V, V GS=0 V V DD=15 V, I D=30 A, V GS=0 to 4.5 V 12 6.3 5.6 11 25 2.9 51 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=15 V, V GS=10 V, I D=30 A, R G=1.6 Ω V GS=0 V, V DS=15 V, f =1 MHz 4000 1400 81 9 7 35 5 5300 1900 120 ns pF Values typ. max. Unit Gate charge total, sync. FET Output charge Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage Q g(sync) Q oss - 22 37 - nC IS I S,pulse V SD T C=25 °C V GS=0 V, I F=30 A, T j=25 °C V R=15 V, I F=I S, di F/dt =400 A/µs - 0.85 50 350 1.1 A V Reverse recovery charge Q rr - - 20 nC 6) See figure 16 for gate charge parameter definition Rev. 0.9 target datasheet page 3 2006-10-23 IPF039N03L G IPU039N03L G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS≥10 V 100 60 80 50 40 60 P tot [W] I D [A] 40 20 0 0 50 100 150 200 30 20 10 0 0 50 100 150 200 T C [°C] T C [°C] 3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 103 1 µs limited by on-state resistance 10 µs 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 10 102 100 µs DC 1 0.5 101 1 ms Z thJC [K/W] I D [A] 0.2 0.1 10 ms 0.1 10 0 0.05 0.02 0.01 single pulse 10-1 10-1 100 101 102 0.01 0 0 0 0 0 0 1 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 0.9 target datasheet page 4 2006-10-23 IPF039N03L G IPU039N03L G 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 150 4.5 V 10 V 3.2 V 3V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 12 120 5V 4V 10 8 3.5 V R DS(on) [mΩ ] 90 3.5 V I D [A] 6 4V 4.5 V 60 3.2 V 4 10 V 5V 11.5 V 30 3V 2 2.8 V 0 0 1 2 3 0 0 20 40 60 80 100 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 150 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 160 120 120 90 g fs [S] 60 30 175 °C 25 °C I D [A] 80 40 0 0 1 2 3 4 5 0 0 20 40 60 80 100 V GS [V] I D [A] Rev. 0.9 target datasheet page 5 2006-10-23 IPF039N03L G IPU039N03L G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=30 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=250 µA 7 2.5 6 2 5 R DS(on) [mΩ ] 98 % typ 3 V GS(th) [V] 100 140 180 4 1.5 1 2 0.5 1 0 -60 -20 20 60 0 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 103 Ciss 25 °C, 98% 103 Coss 102 175 °C 25 °C C [pF] I F [A] z 175 °C, 98% 102 Crss 101 101 0 10 20 30 100 0 0.5 1 1.5 2 V DS [V] V SD [V] Rev. 0.9 target datasheet page 6 2006-10-23 IPF039N03L G IPU039N03L G 13 Avalanche characteristics I AS=f(t AV); R GS=25 Ω parameter: T j(start) 100 14 Typ. gate charge V GS=f(Q gate); I D=30 A pulsed parameter: V DD 12 15 V 6V 10 25 °C 100 °C 150 °C 24 V 8 10 V GS [V] 100 101 102 103 I AV [A] 6 4 2 1 10-1 0 0 10 20 30 40 50 60 t AV [µs] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 34 V GS 32 Qg 30 V BR(DSS) [V] 28 26 V g s(th) 24 22 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 20 T j [°C] Rev. 0.9 target datasheet page 7 2006-10-23 IPF039N03L G IPU039N03L G Package Outline PG-TO251-3-11: Outline PG-TO252-3-23 PG-TO251-3-21: Outline Rev. 0.9 target datasheet page 8 2006-10-23 IPF039N03L G IPU039N03L G Package Outline PG-TO251-3-11: Outline PG-TO251-3-21 PG-TO251-3-21: Outline Rev. 0.9 target datasheet page 9 2006-10-23 IPF039N03L G IPU039N03L G Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 0.9 target datasheet page 10 2006-10-23