IPU06N03LB

IPU06N03LB IPS06N03LB OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max ID 30 5.8 50 V mΩ A PG-TO251-3-11 PG-TO251-3 Type IPU06N03LB IPS06N03LB Package PG-TO251-3 PG-TO251-3-11 Marking 06N03LB 06N03LB Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 50 50 200 210 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C3) I D=50 A, R GS=25 Ω I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C mJ kV/µs V W °C T C=25 °C 94 -55 ... 175 55/175/56 J-STD20 and JESD22 Rev. 0.2 page 1 2006-05-10 IPU06N03LB Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=40 µA V DS=30 V, V GS=0 V, T j=25 °C V DS=30 V, V GS=0 V, T j=125 °C Gate-source leakage current I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=50 A V GS=10 V, I D=50 A Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=50 A 30 1.2 1.6 0.1 Values typ. IPS06N03LB Unit max. 1.6 62 40 K/W 2 1 V µA 41 10 10 7.3 4.9 1.2 83 100 100 9.1 5.8 Ω S nA mΩ 2) Current is limited by bondwire; with an R thJC=1.6 K/W the chip is able to carry 95 A. See figure 3 T j,max=150 °C and duty cycle D