IPU12N03L

IPD12N03L IPU12N03L OptiMOS® Buck converter series Feature •N-Channel Product Summary VDS RDS(on) ID P- TO251 -3-1 30 10.4 30 P- TO252 -3-11 V mΩ A •Logic Level •Low On-Resistance RDS(on) •Excellent Gate Charge x R DS(on) product (FOM) •Superior thermal resistance •175°C operating temperature •Avalanche rated •dv/dt rated •Ideal for fast switching buck converters Type IPD12N03L IPU12N03L Package P- TO252 -3-11 P- TO251 -3-1 Ordering Code Q67040-S4342 Q67042-S4043 Marking 12N03L 12N03L Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current1) TC=25°C Symbol ID Value Unit A 30 30 Pulsed drain current TC=25°C ID puls 120 Avalanche energy, single pulse ID=30A, V DD=25V, RGS=25Ω EAS 150 mJ Repetitive avalanche energy, limited by Tjmax 2) Reverse diode dv/dt IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C EAR dv/dt 10 6 kV/µs Gate source voltage Power dissipation TC=25°C VGS Ptot ±20 100 V W Operating and storage temperature IEC climatic category; DIN IEC 68-1 Tj , Tstg -55... +175 55/175/56 °C Page 1 2003-01-17 IPD12N03L IPU12N03L Thermal Characteristics Parameter Symbol min. Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Values typ. max. Unit RthJC RthJA RthJA - 1 - 1.5 100 K/W - - 75 50 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS=0V, I D=1mA Values typ. max. Unit V(BR)DSS 30 - - V Gate threshold voltage, V GS = VDS ID=50µA VGS(th) 1.2 1.6 2 Zero gate voltage drain current VDS=30V, V GS=0V, T j=25°C VDS=30V, V GS=0V, T j=125°C IDSS IGSS 0.01 10 1 1 100 100 µA Gate-source leakage current VGS=20V, VDS=0V nA Drain-source on-state resistance VGS=4.5V, ID=30A RDS(on) - 11.5 14.7 mΩ Drain-source on-state resistance VGS=10V, ID=30A RDS(on) - 8.1 10.4 1Current limited by bondwire ; with an RthJC = 1.5K/W the chip is able to carry I D= 79A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-01-17 IPD12N03L IPU12N03L Electrical Characteristics Parameter Symbol Conditions min. Dynamic Characteristics Transconductance gfs VDS≥2*ID*RDS(on)max , ID=30A Values typ. max. Unit 23.8 47.5 - S Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Ciss Coss Crss RG t d(on) tr t d(off) tf VGS=0V, VDS =25V, f=1MHz - 1160 450 120 1.2 6.1 13 29.4 17.3 1550 605 175 9.2 20 44.1 26 pF Ω ns VDD=15V, VGS=10V, ID=15A, RG =5.6Ω - Q gs Q gd Qg VDD=15V, ID=15A - 3 10.3 18.2 3.8 12.9 22.8 nC VDD=15V, ID=15A, VGS=0 to 5V - Output charge Q oss VDS=15V, ID =15A, VGS=0V - 16.5 20.6 nC Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge V(plateau) VDD=15V, ID=15A - 2.7 - V IS TC=25°C - - 30 A ISM VSD trr Qrr VGS =0V, IF =30A VR =-V, IF =lS , diF /dt=100A/µs - 0.9 31 29 120 1.2 39 37 V ns nC Page 3 2003-01-17 IPD12N03L IPU12N03L 1 Power dissipation Ptot = f (TC) 2 Drain current ID = f (TC) parameter: VGS≥ 10 V 110 IPD12N03L 32 IPD12N03L W 90 80 A 24 P tot ID 20 40 60 80 100 120 140 160 °C 190 70 60 20 16 50 40 30 20 4 10 0 0 0 0 20 40 60 80 100 120 140 160 °C 190 12 8 TC TC 4 Max. transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 1 IPD12N03L 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , T C = 25 °C 10 3 IPD12N03L K/W A 10 0 /I D tp = 10.0µs ID V DS 10 2 ZthJC 100 µs 10 - 1 R DS (on ) = D = 0.50 10 10 1 1 ms -2 0.20 0.10 0.05 single pulse 10 ms 10 - 3 0.02 0.01 DC 10 0 - 1 10 10 0 10 1 V 10 2 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2003-01-17 IPD12N03L IPU12N03L 5 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: t p = 80 µs 75 IPD12N03L Ptot = 100W 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS 32 IPD12N03L A fe d VGS [V] a 3.0 b c 3.5 4.0 4.5 5.0 5.5 mΩ b c 60 55 c ID 50 45 40 35 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 d e f RDS(on) 24 20 16 d e 12 b 8 4 VGS [V] = b 3.5 c 4.0 d 4.5 e f 5.0 5.5 f a 4 V 5 0 0 10 20 30 40 A 60 VDS 7 Typ. transfer characteristics ID= f ( VGS ); VDS ≥ 2 x ID x R DS(on)max parameter: t p = 80 µs 60 ID 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs 60 A 50 45 S 50 45 35 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 gfs V5 VGS Page 5 ID 40 40 35 30 25 20 15 10 5 0 0 10 20 30 40 A ID 60 2003-01-17 IPD12N03L IPU12N03L 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 30 A, V GS = 10 V 26 IPD12N03L 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS 2.5 mΩ 22 20 V V GS(th) 0,4mA RDS(on) 18 16 14 12 10 8 6 4 2 0 -60 -20 20 60 100 140 °C 1.5 98% 50µA 1 typ 0.5 200 0 -60 -20 20 60 100 °C Tj 180 Tj 11 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 10 4 12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 µs 10 3 IPD12N03L A pF Ciss C 10 3 10 2 Coss 10 1 Tj = 25 °C typ Tj = 175 °C typ Crss 10 2 0 10 0 0 IF Tj = 25 °C (98%) Tj = 175 °C (98%) 5 10 15 20 V VDS 30 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2003-01-17 IPD12N03L IPU12N03L 13 Typ. avalanche energy EAS = f (Tj) par.: I D = 30 A, V DD = 25 V, RGS = 25 Ω 160 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: I D=10 mA 36 IPD12N03L mJ V 120 V(BR)DSS 34 33 32 E AS 100 80 31 60 30 40 29 28 27 -60 20 0 25 45 65 85 105 125 145 °C 185 Tj -20 20 60 100 140 °C 200 Tj 14 Typ. gate charge VGS = f (Q Gate) parameter: I D = 15 A pulsed 16 V IPD12N03L 12 VGS 10 8 6 0.2 VDS max 0.5 VDS max 4 2 0.8 VDS max 0 0 10 20 30 40 nC 55 Q Gate Page 7 2003-01-17 IPD12N03L IPU12N03L Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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