IPU78CN10NG

IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO252) ID 100 78 13 V mΩ A • Ideal for high-frequency switching and synchronous rectification Type IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G Package Marking PG-TO263-3 80CN10N PG-TO252-3 78CN10N PG-TO262-3 80CN10N PG-TO220-3 80CN10N PG-TO251-3 78CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 13 9 52 17 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C I D=13 A, R GS=25 Ω I D=13 A, V DS=80 V, di /dt =100 A/µs, T j,max=175 °C mJ kV/µs V W °C T C=25 °C 31 -55 ... 175 55/175/56 J-STD20 and JESD22 see figure 3 2) 3) Tjmax=150°C and duty cycle D=0.01 for Vgs2|I D|R DS(on)max, I D=13 A 100 2 3 0.1 4 1 µA V - 10 1 59 100 100 78 nA mΩ - 59 78 - 61 80 7 61 0.8 13 80 Ω S 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.01 page 2 2006-06-02 IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics5) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 5) Values typ. max. Unit C iss C oss C rss t d(on) tr t d(off) tf V DD=50 V, V GS=10 V, I D=13 A, R G=2.4 Ω V GS=0 V, V DS=50 V, f =1 MHz - 538 76 8 9 4 13 3 716 101 12 13 6 18 4 pF ns Q gs Q gd Q sw Qg V plateau Q oss V DD=50 V, V GS=0 V V DD=50 V, I D=13 A, V GS=0 to 10 V - 3 2 3 8 5.7 8 4 3 5 11 10 nC V nC IS I S,pulse V SD t rr Q rr T C=25 °C V GS=0 V, I F=13 A, T j=25 °C V R=50 V, I F=I S, di F/dt =100 A/µs - 1 67 114 13 52 1.2 - A V ns nC See figure 16 for gate charge parameter definition Rev. 1.01 page 3 2006-06-02 IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS≥10 V 40 15 30 10 P tot [W] 20 I D [A] 5 0 0 50 100 150 200 0 50 100 150 200 10 0 T C [°C] T C [°C] 3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 102 1 µs 10 µs 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 10 101 100 µs 0.5 1 ms Z thJC [K/W] I D [A] 0.2 1 0.1 0.05 100 DC 10 ms 0.02 0.01 single pulse 10-1 10 -1 0.1 10 0 10 1 10 2 10 3 V DS [V] t p [s] Rev. 1.01 page 4 2006-06-02 IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 60 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 200 180 160 140 8V 10 V 40 5V 5.5 V 6V 6.5 V 7V 7V R DS(on) [mΩ ] 120 100 80 60 8V 10 V I D [A] 20 6.5 V 6V 40 5.5 V 5V 20 0 4 5 0 10 20 30 40 0 0 1 2 4.5 V 3 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 30 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 20 25 15 20 15 g fs [S] 175 °C 25 °C I D [A] 10 10 5 5 0 0 2 4 6 8 0 0 10 20 30 V GS [V] I D [A] Rev. 1.01 page 5 2006-06-02 IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=13 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 180 160 140 120 4 3.5 3 2.5 100 80 typ 98 % 12 µA 120 µA R DS(on) [mΩ ] V GS(th) [V] 100 140 180 2 1.5 1 0.5 0 60 40 20 0 -60 -20 20 60 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 103 Ciss 100 175 °C Coss 25 °C 175 °C, 98% 102 10 C [pF] I F [A] 25 °C, 98% Crss 101 1 100 0 20 40 60 80 0.1 0 0.5 1 1.5 2 V DS [V] V SD [V] Rev. 1.01 page 6 2006-06-02 IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G 13 Avalanche characteristics I AS=f(t AV); R GS=25 Ω parameter: T j(start) 100 14 Typ. gate charge V GS=f(Q gate); I D=13 A pulsed parameter: V DD 12 50 V 10 20 V 80 V 8 10 V GS [V] 25 °C 100 °C 150 °C I AS [A] 6 4 2 1 1 10 100 1000 0 0 2 4 6 8 10 t AV [µs] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 115 V GS Qg 110 V BR(DSS) [V] 105 100 V g s(th) 95 Q g (th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q gate 90 T j [°C] Rev. 1.01 page 7 2006-06-02 IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G PG-TO220-3: Outline Rev. 1.01 page 8 2006-06-02 IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G PG-TO-263 (D²-Pak) Rev. 1.01 page 9 2006-06-02 IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G Rev. 1.01 page 10 2006-06-02 IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G PG-TO252-3: Outline Rev. 1.01 page 11 2006-06-02 IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G PG-TO251-3: Outline Rev. 1.01 page 12 2006-06-02 IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.01 page 13 2006-06-02