IPW60R045CP

IPW60R045CP CoolMOSTM Power Transistor Features • Worldwide best R ds,on in TO247 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tjmax R DS(on),max Q g,typ 650 0.045 150 V Ω nC PG-TO247-3-1 CS CoolMOS is specially designed for: • Hard switching SMPS topologies Type IPW60R045CP Package PG-TO247-3-1 Ordering Code SP000067149 Marking 6R045 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature Mounting torque Rev. 2.0 P tot T j, T stg M3 and M3.5 screws page 1 T C=25 °C T C=25 °C I D=11 A, V DD=50 V I D=11 A, V DD=50 V Value 60 38 230 1950 3 11 50 ±20 ±30 431 -55 ... 150 60 W °C Ncm 2006-06-19 A V/ns V mJ Unit A IPW60R045CP Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode d v /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 44 230 15 V/ns Unit A Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads R thJC R thJA leaded 1.6 mm (0.063 in.) from case for 10 s 0.29 62 K/W T sold - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=250 µA V GS(th) I DSS V DS=V GS, I D=3 mA V DS=600 V, V GS=0 V, T j=25 °C V DS=600 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=44 A, T j=25 °C V GS=10 V, I D=44 A, T j=150 °C Gate resistance RG f =1 MHz, open drain 600 2.5 3 3.5 10 µA V - 50 0.04 100 0.045 nA Ω - 0.11 1.3 Ω Rev. 2.0 page 2 2006-06-19 IPW60R045CP Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Effective output capacitance, energy related5) Effective output capacitance, time related6) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current V SD t rr Q rr I rrm V R=400 V, I F=I S, di F/dt =100 A/µs V GS=0 V, I F=44 A, T j=25 °C 0.9 600 17 60 1.2 V ns µC A Q gs Q gd Qg V plateau V DD=400 V, I D=44 A, V GS=0 to 10 V 34 51 150 5.0 190 V nC C iss C oss C o(er) V GS=0 V, V DS=0 V to 480 V C o(tr) t d(on) tr t d(off) tf V DD=400 V, V GS=10 V, I D=44 A, R G=3.3 Ω 820 30 20 100 10 ns V GS=0 V, V DS=100 V, f =1 MHz 6800 320 310 pF Values typ. max. Unit 1) J-STD20 and JESD22 Pulse width t p limited by T j,max Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. ISD