IPW60R070C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS™ C6 Power Transistor IPW60R070C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor IPW60R070C6 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. drain pin 2 Features • • • • Extremely low losses due to very low FOM Rdson*Qg and Eoss Very high commutation ruggedness Easy to use/drive JEDEC1) qualified, Pb-free plating, Halogen free gate pin 1 source pin 3 Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom, UPS and Solar. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Parameter Key Performance Parameters Value 650 0.07 170 159 13 300 Package PG-TO247 Unit V  nC A µJ A/µs Marking 6R070C6 Related Links IFX C6 Product Brief IFX C6 Portfolio IFX CoolMOS Webpage IFX Design tools VDS @ Tj,max RDS(on),max Qg,typ ID,pulse Eoss @ 400V Body diode di/dt Type IPW60R070C6 1) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.1, 2010-02-09 600V CoolMOS™ C6 Power Transistor IPW60R070C6 Table of Contents Table of Contents 1 2 3 4 5 6 7 8 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 3 Rev. 2.1, 2010-02-09 600V CoolMOS™ C6 Power Transistor IPW60R070C6 Maximum ratings 2 Maximum ratings at Tj = 25 °C, unless otherwise specified. Table 2 Parameter Continuous drain current Pulsed drain current 2) 1) Maximum ratings Symbol Min. ID ID,pulse EAS EAR IAR dv/dt VGS Ptot Tj,Tstg IS IS,pulse dv/dt -20 -30 -55 2) 3) Values Typ. Max. 53 34 159 1135 1.72 9.3 50 20 30 391 150 60 46 159 15 300 Unit A A mJ Note / Test Condition TC= 25 °C TC= 100°C TC=25 °C ID=9.3 A,VDD=50 V (see table 17) ID=9.3 A,VDD=50 V Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source voltage Power dissipation Operating and storage temperature Mounting torque Continuous diode forward current Diode pulse current Reverse diode dv/dt A V/ns V W °C Ncm A A V/ns A/µs M3 and M3.5 screws TC=25 °C TC=25 °C VDS=0...400 V, ISD  ID, Tj=25 °C (see table 18) VDS=0...480 V static AC (f>1 Hz) TC=25 °C Maximum diode commutation dif/dt speed3) 1) Limited by Tj,max. Maximum duty cycle D=0.75 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG 3 Table 3 Parameter Thermal characteristics Thermal characteristics TO-247 (IPW60R070C6) Symbol Min. Values Typ. Max. 0.32 62 260 °C °C/W leaded 1.6 mm (0.063 in.) from case for 10 s Unit Note / Test Condition Thermal resistance, junction - case RthJC Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads RthJA Tsold Final Data Sheet 4 Rev. 2.1, 2010-02-09 600V CoolMOS™ C6 Power Transistor IPW60R070C6 Electrical characteristics 4 Electrical characteristics Electrical characteristics, at Tj=25 °C, unless otherwise specified. Table 4 Parameter Static characteristics Symbol Min. Drain-source breakdown voltage V(BR)DSS Gate threshold voltage Zero gate voltage drain current 600 2.5 Gate-source leakage current 3 50 0.063 0.164 0.85 Values Typ. Max. 3.5 5 100 0.07  nA  µA V Unit Note / Test Condition VGS=0 V, ID=0.25 mA VDS=VGS, ID=1.72 mA VDS=600 V, VGS=0 V, Tj=25 °C VDS=600 V, VGS=0 V, Tj=150 °C VGS=20 V, VDS=0 V VGS=10 V, ID=25.8 A, Tj=25 °C VGS=10 V, ID=25.8 A, Tj=150 °C f=1 MHz, open drain VGS(th) IDSS IGSS - Drain-source on-state resistance RDS(on) Gate resistance RG - Table 5 Parameter Dynamic characteristics Symbol Min. Values Typ. 3800 215 140 710 16 12 83 Max. ns pF Unit Note / Test Condition Input capacitance Output capacitance Effective output capacitance, energy related1) Effective output capacitance, time related2) Turn-on delay time Rise time Turn-off delay time Ciss Coss Co(er) Co(tr) td(on) tr td(off) VGS=0 V, VDS=100 V, f=1 MHz VGS=0 V, VDS=0...480 V ID=constant, VGS=0 V VDS=0...480V VDD=400 V, VGS=13 V, ID=25.8A, RG= 1. (see table 16 Fall time tf 5 1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS 2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS Final Data Sheet 5 Rev. 2.1, 2010-02-09 600V CoolMOS™ C6 Power Transistor IPW60R070C6 Electrical characteristics Table 6 Parameter Gate charge characteristics Symbol Min. Values Typ. 21 87 170 5.4 Max. V nC Unit Note / Test Condition Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Table 7 Parameter Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Qgs Qgd Qg Vplateau VDD=480 V, ID=25.8 A, VGS=0 to 10 V Reverse diode characteristics Symbol Min. Values Typ. 0.9 720 19 52 Max. V ns µC A Unit Note / Test Condition VSD trr Qrr Irrm VGS=0 V, IF=25.8 A, Tj=25 °C VR=400 V, IF=25.8 A, diF/dt=100 A/µs (see table 18) Final Data Sheet 6 Rev. 2.1, 2010-02-09 600V CoolMOS™ C6 Power Transistor IPW60R070C6 5 Electrical characteristics diagrams Electrical characteristics diagrams Table 8 Power dissipation Max. transient thermal impedance Ptot = f(TC) Table 9 Safe operating area TC=25 °C Z(thJC)=f(tp); parameter: D=tp/T Safe operating area TC=80 °C ID=f(VDS); TC=25 °C; D=0; parameter tp ID=f(VDS); TC=80°C; D=0; parameter tp Final Data Sheet 7 Rev. 2.1, 2010-02-09 600V CoolMOS™ C6 Power Transistor IPW60R070C6 Electrical characteristics diagrams Table 10 Typ. output characteristics Tj=25 °C Typ. output characteristics Tj=125 °C ID=f(VDS); Tj=25 °C; parameter: VGS Table 11 Typ. drain-source on-state resistance ID=f(VDS); Tj=125 °C; parameter: VGS Drain-source on-state resistance RDS(on)=f(ID); Tj=125 °C; parameter: VGS RDS(on)=f(Tj); ID=25.8 A; VGS=10 V Final Data Sheet 8 Rev. 2.1, 2010-02-09 600V CoolMOS™ C6 Power Transistor IPW60R070C6 Electrical characteristics diagrams Table 12 Typ. transfer characteristics Typ. gate charge ID=f(VGS); VDS=20V Table 13 Avalanche energy VGS=f(Qgate), ID=25.8 A pulsed Drain-source breakdown voltage EAS=f(Tj); ID=9.3 A; VDD=50 V VBR(DSS)=f(Tj); ID=0.25 mA Final Data Sheet 9 Rev. 2.1, 2010-02-09 600V CoolMOS™ C6 Power Transistor IPW60R070C6 Electrical characteristics diagrams Table 14 Typ. capacitances Typ. Coss stored energy C=f(VDS); VGS=0 V; f=1 MHz Table 15 Forward characteristics of reverse diode EOSS=f(VDS) IF=f(VSD); parameter: Tj Final Data Sheet 10 Rev. 2.1, 2010-02-09 600V CoolMOS™ C6 Power Transistor IPW60R070C6 Test circuits 6 Table 16 Test circuits Switching times test circuit and waveform for inductive load Switching time waveform Switching times test circuit for inductive load VDS VDS VGS 90% VGS 10% td(off) toff td(on) ton tr tf Table 17 Unclamped inductive load test circuit and waveform Unclamped inductive waveform V(BR)DS VD Unclamped inductive load test circuit ID VDS VDS ID VDS Table 18 Test circuit and waveform for diode recovery times Diode recovery waveform i v Test circuit for diode recovery times ID R G1 VDS RG2 d iF /d t ΙF trr = tS + tF Q rr = Q S + Q F trr tS tF 10% Ι RRM d irr /d t 90% Ι RRM VRRM t Ι RRM QS QF RG1 = RG2 v SIL00088 Final Data Sheet 11 Rev. 2.1, 2010-02-09 600V CoolMOS™ C6 Power Transistor IPW60R070C6 Package outlines 7 Package outlines Figure 1 Outlines TO-247, dimensions in mm/inches 12 Rev. 2.1, 2010-02-09 Final Data Sheet 600V CoolMOS™ C6 Power Transistor IPW60R070C6 Revision History 8 Revision History CoolMOS C6 600V CoolMOS™ C6 Power Transistor Revision History: 2010-02-09, Rev. 2.1 Previous Revision: Revision 2.0 2.1 Subjects (major changes since last revision) Release of final data sheet New package outlines TO-247 We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Edition 2010-02-09 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 13 Rev. 2.1, 2010-02-09