IPW60R099CPA

IPW60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS(on),max Q g,typ 600 0.105 60 V Ω nC Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified • Green package (RoHS compliant) CoolMOS CPA is specially designed for: • DC/DC converters for Automotive Applications PG-TO247-3 Type IPW60R099CPA Package PG-TO247-3 Marking 6R099A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current1) Avalanche energy, single pulse Avalanche energy, repetitive t AR1),2) Avalanche current, repetitive t AR1),2) MOSFET dv /dt ruggedness Gate source voltage Power dissipation Operating temperature Storage temperature Mounting torque Rev. 2.0 I D,pulse E AS E AR I AR dv /dt V GS P tot Tj T stg M3 and M3.5 screws page 1 V DS=0...480 V static T C=25 °C T C=25 °C I D=11 A, V DD=50 V I D=11 A, V DD=50 V Value 31 19 93 800 1.2 11 50 ±20 255 -40 ... 150 -40 ... 150 60 Ncm 2010-02-15 A V/ns V W °C mJ Unit A IPW60R099CPA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current1) Reverse diode dv /dt 3) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 18 93 15 V/ns Unit A Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads R thJC R thJA leaded 1.6 mm (0.063 in.) from case for 10 s 0.5 62 K/W T sold - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=250 µA V GS(th) V DS=V GS, I D=1.2 mA V DS=600 V, V GS=0 V, T j=25 °C V GS=20 V, V DS=0 V V GS=10 V, I D=18 A, T j=25 °C V GS=10 V, I D=18 A, T j=150 °C Gate resistance RG f =1 MHz, open drain 600 2.5 3 3.5 V Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance I DSS I GSS R DS(on) - 0.09 5 100 0.105 µA nA Ω - 0.24 1.3 Ω Rev. 2.0 page 2 2010-02-15 IPW60R099CPA Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance C iss C oss V GS=0 V, V DS=100 V, f =1 MHz V GS=0 V, V DS=0 V to 480 V V DD=400 V, V GS=10 V, I D=18 A, R G=3.3 Ω 340 10 5 60 5 ns 2800 130 130 pF Values typ. max. Unit Effective output capacitance, energy C o(er) related4) Effective output capacitance, time related5) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current 1) 2) C o(tr) t d(on) tr t d(off) tf Q gs Q gd Qg V plateau V DD=400 V, I D=18 A, V GS=0 to 10 V - 14 20 60 5.0 80 - nC V V SD t rr Q rr I rrm V GS=0 V, I F=18 A, T j=25 °C - 0.9 450 12 70 1.2 - V ns µC A V R=400 V, I F=I S, di F/dt =100 A/µs - Pulse width t p limited by T j,max Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. I SD≤I D, di /dt ≤100A/µs, V DClink=400V, V peak