IPW60R190E6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS™ E6 Power Transistor IPx60R190E6 Data Sheet Rev. 2.0, 2010-05-03 Final I n d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ E6 Power Transistor IPP60R190E6, IPA60R190E6 IPW60R190E6 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS ™ E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features • • • • Extremely low losses due to very low FOM R dson*Qg and Eoss Very high commutation ruggedness Easy to use/drive JEDEC1) qualified, Pb-free plating, Halogen free drain pin 2 gate pin 1 Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Parameter Key Performance Parameters Value 650 0.19 63 59 5.2 500 Package PG-TO247 PG-TO220 PG-TO220 FullPAK 6R190E6 Unit V ! nC A µJ A/µs Marking Related Links source pin 3 VDS @ Tj,max R DS(on),max Qg,typ ID,pulse Eoss @ 400V Body diode d i/d t Type / Ordering Code IPW60R190E6 IPP60R190E6 IPA60R190E6 IFX CoolMOS Webpage IFX Design tools 1) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.0, 2010-05-03 600V CoolMOS™ E6 Power Transistor IPx60R190E6 Table of Contents Table of Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 3 4 5 6 7 8 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Final Data Sheet 3 Rev. 2.0, 2010-05-03 600V CoolMOS™ E6 Power Transistor IPx60R190E6 Maximum ratings 2 Maximum ratings at Tj = 25 °C, unless otherwise specified. Table 2 Parameter Continuous drain current Pulsed drain current 2) 1) Maximum ratings Symbol Min. ID ID,pulse EAS EAR IAR dv/dt VGS Ptot Ptot Tj,Tstg -20 -30 -55 Values Typ. Max. 20.2 12.8 59 418 0.63 3.4 50 20 30 151 34 150 60 50 IS IS,pulse dv/dt 17.5 59 15 500 A A V/ns A/µs °C Ncm M3 and M3.5 screws M2.5 screws TC=25 °C TC=25 °C VDS =0...400 V,ISD " I D, Tj=25 °C (see table 21) W A V/ns V VDS =0...480 V static AC (f>1 Hz) TC=25 °C A mJ A TC= 25 °C TC= 100°C TC=25 °C ID=3.4 A,VDD=50 V (see table 20) ID=3.4 A,VDD=50 V Unit Note / Test Condition Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source voltage Power dissipation for TO-220, TO-247 Power dissipation for TO-220 FullPAK Operating and storage temperature Mounting torque TO-220, TO-247 Mounting torque TO-220 FullPAK Continuous diode forward current Diode pulse current 2) 3) Reverse diode dv/dt Maximum diode commutation dif/dt speed3) 1) Limited by Tj,max. Maximum duty cycle D=0.75 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG Final Data Sheet 4 Rev. 2.0, 2010-05-03 600V CoolMOS™ E6 Power Transistor IPx60R190E6 Thermal characteristics 3 Thermal characteristics Table 3 Parameter Thermal characteristics TO-220 (IPP60R190E6),TO-247 (IPW60R190E6) Symbol Min. Values Typ. Max. 0.83 62 260 °C °C/W leaded 1.6 mm (0.063 in.) from case for 10 s Unit Note / Test Condition Thermal resistance, junction - case RthJC Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads Table 4 Parameter RthJA Tsold Thermal characteristics TO-220 FullPAK (IPA60R190E6) Symbol Min. Values Typ. Max. 3.7 80 260 °C °C/W leaded 1.6 mm (0.063 in.) from case for 10 s Unit Note / Test Condition Thermal resistance, junction - case RthJC Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads RthJA Tsold Final Data Sheet 5 Rev. 2.0, 2010-05-03 600V CoolMOS™ E6 Power Transistor IPx60R190E6 Electrical characteristics 4 Electrical characteristics Electrical characteristics, at Tj=25 °C, unless otherwise specified. Table 5 Parameter Static characteristics Symbol Min. Drain-source breakdown voltage V(BR)DSS Gate threshold voltage Zero gate voltage drain current 600 2.5 Gate-source leakage current 3 10 0.17 0.44 6 Values Typ. Max. 3.5 1 100 0.190 ! nA ! µA V Unit Note / Test Condition VGS=0 V, ID=0.25 mA VDS =VGS, ID=0.63mA VDS =600 V, VGS=0 V, Tj=25 °C VDS =600 V, VGS=0 V, Tj=150 °C VGS=20 V, VDS =0 V VGS=10 V, ID=9.5 A, Tj=25 °C VGS=10 V, ID=9.5 A, Tj=150 °C f=1 MHz, open drain VGS(th) IDSS IGSS - Drain-source on-state resistance RDS(on) Gate resistance RG - Table 6 Parameter Dynamic characteristics Symbol Min. Values Typ. 1400 85 56 266 12 10 90 Max. ns pF Unit Note / Test Condition Input capacitance Output capacitance Effective output capacitance, energy related1) Effective output capacitance, time related2) Turn-on delay time Rise time Turn-off delay time Ciss Coss Co(er) Co(tr) td(on) tr td(off) VGS=0 V, VDS=100 V, f=1 MHz VGS=0 V, VDS=0...480 V ID=constant, VGS=0 V VDS=0...480V VDD=400 V, VGS=13 V, ID=9.5 A, RG= 3.4 ! (see table 19) Fall time tf 8 1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS 2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS Final Data Sheet 6 Rev. 2.0, 2010-05-03 600V CoolMOS™ E6 Power Transistor IPx60R190E6 Electrical characteristics Table 7 Parameter Gate charge characteristics Symbol Min. Values Typ. 7.6 32 63 5.4 Max. V nC Unit Note / Test Condition Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Table 8 Parameter Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Qgs Qgd Qg Vplateau VDD=480 V, ID=9.5A, VGS=0 to 10 V Reverse diode characteristics Symbol Min. Values Typ. 0.9 430 6.9 30 Max. V ns µC A Unit Note / Test Condition VSD trr Qrr Irrm VGS=0 V, IF=9.5A, Tj=25 °C VR=400 V, IF=9.5A, diF/dt=100 A/µs (see table 22) Final Data Sheet 7 Rev. 2.0, 2010-05-03 600V CoolMOS™ E6 Power Transistor IPx60R190E6 Electrical characteristics diagrams 5 Electrical characteristics diagrams Table 9 Power dissipation TO-220, TO-247 Power dissipation TO-220 FullPAK Ptot = f(TC) Table 10 Max. transient thermal impedance TO-220, TO-247 Ptot = f(TC) Max. transient thermal impedance TO-220 FullPAK Z(thJC)=f(tp); parameter: D=tp/T Final Data Sheet 8 Z(thJC)=f(tp); parameter: D=tp/T Rev. 2.0, 2010-05-03 600V CoolMOS™ E6 Power Transistor IPx60R190E6 Electrical characteristics diagrams Table 11 Safe operating area TC=25 °C TO-220, TO-247 Safe operating area TC=25 °C TO-220 FullPAK ID=f(VDS); TC=25 °C; D=0; parameter tp Table 12 Safe operating area TC=80 °C TO-220, TO-247 ID=f(VDS ); TC=25 °C; D=0; parameter tp Safe operating area TC=80 °C TO-220 FullPAK ID=f(VDS); TC=80 °C; D=0; parameter tp ID=f(VDS); TC=80 °C; D=0; parameter tp Final Data Sheet 9 Rev. 2.0, 2010-05-03 600V CoolMOS™ E6 Power Transistor IPx60R190E6 Electrical characteristics diagrams Table 13 Typ. output characteristics TC=25 °C Typ. output characteristics Tj=125 °C ID=f(VDS); Tj=25 °C; parameter: VGS Table 14 Typ. drain-source on-state resistance ID=f(VDS); Tj=125 °C; parameter: VGS Drain-source on-state resistance RDS(on)=f( ID); Tj=125 °C; parameter: VGS RDS(on)=f(Tj); ID=9.5 A; VGS=10 V Final Data Sheet 10 Rev. 2.0, 2010-05-03 600V CoolMOS™ E6 Power Transistor IPx60R190E6 Electrical characteristics diagrams Table 15 Typ. transfer characteristics Typ. gate charge ID=f(VGS); VDS=20V Table 16 Avalanche energy VGS=f(Qgate), ID=9.5A pulsed Drain-source breakdown voltage EAS=f(Tj); ID=3.4 A; VDD=50 V VBR(DSS)=f( Tj); ID=0.25 mA Final Data Sheet 11 Rev. 2.0, 2010-05-03 600V CoolMOS™ E6 Power Transistor IPx60R190E6 Electrical characteristics diagrams Table 17 Typ. capacitances Typ. Coss stored energy C=f(VDS); VGS=0 V; f=1 MHz Table 18 Forward characteristics of reverse diode EOSS=f(VDS) IF=f(VSD); parameter: Tj Final Data Sheet 12 Rev. 2.0, 2010-05-03 600V CoolMOS™ E6 Power Transistor IPx60R190E6 Test circuits 6 Table 19 Test circuits Switching times test circuit and waveform for inductive load Switching time waveform Switching times test circuit for inductive load VDS 90% V DS V GS VGS 10% td(on) ton tr td(off) toff tf Table 20 Unclamped inductive load test circuit and waveform Unclamped inductive waveform Unclamped inductive load test circuit V(BR)DS VD ID V DS VDS ID VDS Table 21 Test circuit and waveform for diode characteristics Diode recovery waveform Test circuit for diode characteristics ID RG1 V DS RG2 $ @ $4 )@ % 4 %LL 1 % ; % % 4 " LL 1 " ; % " 4 % LL %; %4 +*" @ $LL )@ % 998 998 "; "4 0*" 998 % #998 RG1 = RG2 ;57***// Final Data Sheet 13 Rev. 2.0, 2010-05-03 600V CoolMOS™ E6 Power Transistor IPx60R190E6 Package outlines 7 Package outlines Figure 1 Outlines TO-247, dimensions in mm/inches Final Data Sheet 14 Rev. 2.0, 2010-05-03 600V CoolMOS™ E6 Power Transistor IPx60R190E6 Package outlines Figure 2 Outlines TO-220, dimensions in mm/inches Final Data Sheet 15 Rev. 2.0, 2010-05-03 600V CoolMOS™ E6 Power Transistor IPx60R190E6 Package outlines Figure 3 Outlines TO-220 FullPAK, dimensions in mm/inches Final Data Sheet 16 Rev. 2.0, 2010-05-03 600V CoolMOS™ E6 Power Transistor IPx60R190E6 Revision History 8 Revision History CoolMOS E6 600V CoolMOS ™ E6 Power Transistor Revision History: 2010-05-03, Rev. 2.0 Revision 2.0 Subjects (major changes since last revision) Release of final data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Edition 2010-05-03 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 17 Rev. 2.0, 2010-05-03