IPW65R080CFD

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD 650V CoolMOS™ CFD Power Transistor IPW65R080CFD Data Sheet Rev. 2.0, 2011-02-02 Final Industrial & Multimarket 650V CoolMOS™ CFD Power Transistor IPW65R080CFD 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode. This combination of extremely low switching, commutation and conduction losses together with highest robustness make especially resonant switching applications more reliable, more efficient, lighter, and cooler drain pin 2 Features • • • • • • Ultra-fast body diode Very high commutation ruggedness Extremely low losses due to very low FOM Rdson*Qg and Eoss Easy to use/drive Qualified for industrial grade applications according to JEDEC1), Pb-free plating, Halogen free mold compound gate pin 1 source pin 3 Applications 650V CoolMOS™ CFD is especially suitable for resonant switching PWM stages for e.g. PC Silverbox, LCD TV, Lighting, Server,Telecom, and Solar Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Parameter Key Performance Parameters Value 700 0.08 900 1 180 10 170 137 12.5 Package PG-TO247 Unit V  A/µs µC ns A nC A µJ Marking 65F6080 Related Links IFX CoolMOS Webpage IFX Design tools VDS @ Tj,max RDS(on),max Body diode di/dt Qrr trr Irrm Qg,typ ID,pulse Eoss @ 400V Type IPW65R080CFD 1) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.0, 2011-02-02 650V CoolMOS™ CFD Power Transistor IPW65R080CFD Table of Contents Table of Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 3 4 5 6 7 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 3 Rev. 2.0, 2011-02-02 650V CoolMOS™ CFD Power Transistor IPW65R080CFD Maximum ratings 2 Maximum ratings at Tj = 25 °C, unless otherwise specified. Table 2 Parameter Continuous drain current Pulsed drain current 2) 1) Maximum ratings Symbol Min. ID ID,pulse EAS EAR IAR dv/dt VGS Ptot Tj,Tstg IS IS,pulse dv/dt dif/dt -20 -30 -55 2) 3) Values Typ. Max. 43.3 27.4 137 1160 1.76 8.7 50 20 30 391 150 60 43.3 140 50 900 Unit A A mJ A V/ns V W °C Ncm A A V/ns A/µs Note / Test Condition TC= 25 °C TC= 100°C TC=25 °C ID=8.7 A,VDD=50 V Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source voltage Power dissipation Operating and storage temperature Mounting torque Continuous diode forward current Diode pulse current Reverse diode dv/dt VDS=0...480 V static AC (f>1 Hz) TC=25 °C M3 and M3.5 screws TC=25 °C TC=25 °C VDS=0...400 V, ISD  ID, Tj=25 °C Maximum diode commutation speed3) 1) Limited by Tj,max. 2) Pulse width tp limited by Tj,max 3) ISD≤ID, di/dt≤900A/µs, VDClink=400V, Vpeak 7,5V; TC=80 °C; D=0; parameter tp Final Data Sheet 7 Rev. 2.0, 2011-02-02 650V CoolMOS™ CFD Power Transistor IPW65R080CFD Electrical characteristics diagrams Table 10 Typ. output characteristics Tj=25 °C Typ. output characteristics Tj=125 °C ID=f(VDS); Tj=25 °C; parameter: VGS Table 11 Typ. drain-source on-state resistance ID=f(VDS); Tj=125 °C; parameter: VGS Drain-source on-state resistance RDS(on)=f(ID); Tj=125 °C; parameter: VGS RDS(on)=f(Tj); ID=17.6 A; VGS=10 V Final Data Sheet 8 Rev. 2.0, 2011-02-02 650V CoolMOS™ CFD Power Transistor IPW65R080CFD Electrical characteristics diagrams Table 12 Typ. transfer characteristics Typ. gate charge ID=f(VGS); VDS=20V Table 13 Avalanche energy VGS=f(Qgate), ID=26.3 A pulsed Drain-source breakdown voltage EAS=f(Tj); ID=8.7 A; VDD=50 V VBR(DSS)=f(Tj); ID=1.0 mA Final Data Sheet 9 Rev. 2.0, 2011-02-02 650V CoolMOS™ CFD Power Transistor IPW65R080CFD Electrical characteristics diagrams Table 14 Typ. capacitances Typ. Coss stored energy C=f(VDS); VGS=0 V; f=1 MHz Table 15 Forward characteristics of reverse diode EOSS=f(VDS) IF=f(VSD); parameter: Tj Final Data Sheet 10 Rev. 2.0, 2011-02-02 650V CoolMOS™ CFD Power Transistor IPW65R080CFD Package outlines 6 Package outlines TO247-3-21/-41/-44 DIM A A1 A2 b b1 b2 b3 b4 c D D1 D2 E E1 E2 E3 e N L L1 øP Q S MILLIMETERS MIN MAX 5.21 4.83 2.54 2.27 2.16 1.85 1.33 1.07 2.41 1.90 1.90 2.16 2.87 3.38 2.87 3.13 0.68 0.55 20.80 21.10 16.25 17.65 0.95 1.35 15.70 16.13 13.10 14.15 3.68 5.10 1.00 2.60 5.44 (BSC) 3 19.80 20.32 4.47 4.10 3.50 3.70 5.49 6.00 6.04 6.30 INCHES MIN 0.190 0.089 0.073 0.042 0.075 0.075 0.113 0.113 0.022 0.819 0.640 0.037 0.618 0.516 0.145 0.039 MAX 0.205 0.100 0.085 0.052 0.095 0.085 0.133 0.123 0.027 0.831 0.695 0.053 0.635 0.557 0.201 0.102 0.214 (BSC) 3 0.800 0.176 0.146 0.236 0.248 DOCUMENT NO. Z8B00003327 SCALE 0 0 55 7.5mm EUROPEAN PROJECTION 0.780 0.161 0.138 0.216 0.238 ISSUE DATE 09-07-2010 REVISION 05 Figure 1 Outlines TO-247, dimensions in mm/inches Final Data Sheet 11 Rev. 2.0, 2011-02-02 650V CoolMOS™ CFD Power Transistor IPW65R080CFD Revision History 7 Revision History Revision History: 2011-02-02, Rev. 2.0 Previous Revision: Revision 2.0 Subjects (major changes since last revision) Release of final data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Edition 2011-02-02 Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 12 Rev. 2.0, 2011-02-02