IPW65R660CFD

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CFD 650V CoolMOS™ CFD Power Transistor IPx65R660CFD Data Sheet Rev. 2.0, 2011-02-01 Final Industrial & Multimarket 650V CoolMOS™ CFD Power Transistor IPD65R660CFD IPB65R660CFD, IPP65R660CFD IPA65R660CFD 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 650V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode. This combination of extremely low switching, commutation and conduction losses together with highest robustness make especially resonant switching applications more reliable, more efficient, lighter, and cooler Features • Ultra-fast body diode • Very high commutation ruggedness • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Easy to use/drive • Qualified for industrial grade applications according to JEDEC1) • Pb-free plating, Halogen free mold compound Applications 650V CoolMOS™ CFD is especially suitable for resonant switching PWM stages for e.g. PC Silverbox, LCD TV, Lighting, Server,Telecom. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Parameter Key Performance Parameters Value 700 0.66 20 17 1.8 500 Package PG-TO252 PG-TO263 PG-TO220 PG-TO220 FullPAK PG-TO262 PG-TO247 65F660 drain pin 2 gate pin 1 source pin 3 Unit V  nC A µJ A/µs Marking Related Links IFX CoolMOS Webpage IFX Design tools VDS @ Tj,max RDS(on),max Qg,typ ID,pulse Eoss @ 400V Body diode di/dt Type / Ordering Code IPD65R660CFD IPB65R660CFD IPP65R660CFD IPA65R660CFD IPI65R660CFD IPW65R660CFD 1) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.0, 2011-02-01 650V CoolMOS™ CFD Power Transistor IPx65R660CFD Table of Contents Table of Contents 1 2 3 4 5 6 7 8 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Final Data Sheet 3 Rev. 2.0, 2011-02-01 650V CoolMOS™ CFD Power Transistor IPx65R660CFD Maximum ratings 2 Maximum ratings at Tj = 25 °C, unless otherwise specified. Table 2 Parameter Continuous drain current Pulsed drain current 2) 1) Maximum ratings Symbol Min. ID ID,pulse EAS EAR IAR dv/dt VGS Ptot Ptot Tj,Tstg -20 -30 -55 IS IS,pulse dv/dt dif/dt Values Typ. Max. 6.0 3.8 17 115 0.21 1.2 50 20 30 63 28 150 60 50 6.0 17 15 500 A A V/ns A/µs W W °C Ncm M3 and M3.5 screws M2.5 screws TC=25 °C TC=25 °C VDS=0...480 V,ISD  ID, Tj=125 °C A V/ns V VDS=0...480 V static AC (f>1 Hz) TC=25 °C TC=25 °C A mJ A TC= 25 °C TC= 100°C TC=25 °C ID=1.2 A,VDD=50 V ID=1.2 A,VDD=50 V Unit Note / Test Condition Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source voltage Power dissipation for Non FullPAK Power dissipation for FullPAK Operating and storage temperature Mounting torque non FullPAK Mounting torque FullPAK Continuous diode forward current Diode pulse current 2) 3) Reverse diode dv/dt Maximum diode commutation speed3) 1) Limited by Tj,max. 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG Final Data Sheet 4 Rev. 2.0, 2011-02-01 650V CoolMOS™ CFD Power Transistor IPx65R660CFD Thermal characteristics 3 Thermal characteristics Table 3 Parameter Thermal characteristics TO-220; TO-247 & TO-262 Symbol Min. Values Typ. Max. 2.0 62 260 °C °C/W leaded 1.6 mm (0.063 in.) from case for 10 s Unit Note / Test Condition Thermal resistance, junction - case RthJC Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads Table 4 Parameter RthJA Tsold Thermal characteristics TO-220FullPAK Symbol Min. Values Typ. Max. 4.5 80 260 °C °C/W leaded 1.6 mm (0.063 in.) from case for 10 s Unit Note / Test Condition Thermal resistance, junction - case RthJC Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads Table 5 Parameter RthJA Tsold Thermal characteristics TO-263 and TO-252 Symbol Min. Values Typ. Max. 2.0 62 °C/W SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6cm2 cooling area1) 260 °C reflow MSL1 Unit Note / Test Condition Thermal resistance, junction - case RthJC Thermal resistance, junction ambient RthJA 35 Soldering temperature, wave- & reflowsoldering allowed Tsold - - 1) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without air stream cooling. Final Data Sheet 5 Rev. 2.0, 2011-02-01 650V CoolMOS™ CFD Power Transistor IPx65R660CFD Electrical characteristics 4 Electrical characteristics Electrical characteristics, at Tj=25 °C, unless otherwise specified Table 6 Parameter Static characteristics Symbol Min. Drain-source breakdown voltage V(BR)DSS Gate threshold voltage Zero gate voltage drain current 650 3.5 Gate-source leakage current 4 600 0.59 1.54 6.5 Values Typ. Max. 4.5 5 100 0.66  nA  µA V Unit Note / Test Condition VGS=0 V, ID=1.0 mA VDS=VGS, ID=0.21 mA VDS=600 V, VGS=0 V, Tj=25 °C VDS=600 V, VGS=0 V, Tj=150 °C VGS=20 V, VDS=0 V VGS=10 V, ID=2.1 A, Tj=25 °C VGS=10 V, ID=2.1 A, Tj=150 °C f=1 MHz, open drain VGS(th) IDSS IGSS - Drain-source on-state resistance RDS(on) Gate resistance RG - Table 7 Parameter Dynamic characteristics Symbol Min. Values Typ. 615 33 21 88 9 8 40 Max. ns pF Unit Note / Test Condition Input capacitance Output capacitance Effective output capacitance, energy related1) Effective output capacitance, time related2) Turn-on delay time Rise time Turn-off delay time Ciss Coss Co(er) Co(tr) td(on) tr td(off) VGS=0 V, VDS=100 V, f=1 MHz VGS=0 V, VDS=0...480 V ID=constant, VGS=0 V VDS=0...480V VDD=400 V, VGS=13 V, ID=3.2A, RG= 6.8  Fall time tf 10 1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS 2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS Final Data Sheet 6 Rev. 2.0, 2011-02-01 650V CoolMOS™ CFD Power Transistor IPx65R660CFD Electrical characteristics Table 8 Parameter Gate charge characteristics Symbol Min. Values Typ. 3.5 12 22 6.4 Max. V nC Unit Note / Test Condition IGate to source charge Gate to drain charge Gate charge total Gate plateau voltage Table 9 Parameter Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Qgs Qgd Qg Vplateau VDD=480 V, ID=3.2 A, VGS=0 to 10 V Reverse diode characteristics Symbol Min. Values Typ. 0.9 65 0.20 4.5 Max. V ns µC A Unit Note / Test Condition VSD trr Qrr Irrm VGS=0 V, IF=3.2 A, Tj=25 °C VR=400 V, IF=3.2 A, diF/dt=100 A/µs Final Data Sheet 7 Rev. 2.0, 2011-02-01 650V CoolMOS™ CFD Power Transistor IPx65R660CFD 5 Electrical characteristics diagrams Electrical characteristics diagrams Table 10 Power dissipation Non FullPAK Power dissipation FullPAK Ptot = f(TC) Table 11 Max. transient thermal impedance Non FullPAK Ptot = f(TC) Max. transient thermal impedance FullPAK Z(thJC)=f(tp); parameter: D=tp/T Final Data Sheet 8 Z(thJC)=f(tp); parameter: D=tp/T Rev. 2.0, 2011-02-01 650V CoolMOS™ CFD Power Transistor IPx65R660CFD Electrical characteristics diagrams Table 12 Safe operating area TC=25 °C Non FullPAK Safe operating area TC=25 °C FullPAK ID=f(VDS); TC=25 °C; VGS > 7.5V; D=0; parameter tp Table 13 Safe operating area TC=80 °C Non FullPAK ID=f(VDS); TC=25 °C; VGS > 7.5V; D=0; parameter tp Safe operating area TC=80 °C FullPAK ID=f(VDS); TC=80 °C; VGS > 7.5V; D=0; parameter tp ID=f(VDS); TC=80 °C; VGS > 7.5V; D=0; parameter tp Final Data Sheet 9 Rev. 2.0, 2011-02-01 650V CoolMOS™ CFD Power Transistor IPx65R660CFD Electrical characteristics diagrams Table 14 Typ. output characteristics Tj=25 °C Typ. output characteristics Tj=125 °C ID=f(VDS); Tj=25 °C; parameter: VGS Table 15 Typ. drain-source on-state resistance ID=f(VDS); Tj=125 °C; parameter: VGS Drain-source on-state resistance RDS(on)=f(ID); Tj=125 °C; parameter: VGS RDS(on)=f(Tj); ID=2.1 A; VGS=10 V Final Data Sheet 10 Rev. 2.0, 2011-02-01 650V CoolMOS™ CFD Power Transistor IPx65R660CFD Electrical characteristics diagrams Table 16 Typ. transfer characteristics Typ. gate charge ID=f(VGS); VDS=20V Table 17 Avalanche energy VGS=f(Qgate), ID=3.2 A pulsed Drain-source breakdown voltage EAS=f(Tj); ID=1.2 A; VDD=50 V VBR(DSS)=f(Tj); ID=1.0 mA Final Data Sheet 11 Rev. 2.0, 2011-02-01 650V CoolMOS™ CFD Power Transistor IPx65R660CFD Electrical characteristics diagrams Table 18 Typ. capacitances Typ. Coss stored energy C=f(VDS); VGS=0 V; f=1 MHz Table 19 Forward characteristics of reverse diode EOSS=f(VDS) IF=f(VSD); parameter: Tj Final Data Sheet 12 Rev. 2.0, 2011-02-01 650V CoolMOS™ CFD Power Transistor IPx65R660CFD Test circuits 6 Table 20 Test circuits Switching times test circuit and waveform for inductive load Switching time waveform Switching times test circuit for inductive load VDS VDS VGS 90% VGS 10% td(off) toff td(on) ton tr tf Table 21 Unclamped inductive load test circuit and waveform Unclamped inductive waveform V(BR)DS VD Unclamped inductive load test circuit ID VDS VDS ID VDS Table 22 Test circuit and waveform for diode characteristics Diode recovery waveform i v Test circuit for diode characteristics ID R G1 VDS RG2 d iF /d t ΙF trr = tS + tF Q rr = Q S + Q F trr tS tF 10% Ι RRM d irr /d t 90% Ι RRM VRRM t Ι RRM QS QF RG1 = RG2 v SIL00088 Final Data Sheet 13 Rev. 2.0, 2011-02-01 650V CoolMOS™ CFD Power Transistor IPx65R660CFD Package outlines 7 Package outlines Figure 1 Outlines TO-252, dimensions in mm/inches Final Data Sheet 14 Rev. 2.0, 2011-02-01 650V CoolMOS™ CFD Power Transistor IPx65R660CFD Package outlines Figure 2 Outlines TO-220, dimensions in mm/inches Final Data Sheet 15 Rev. 2.0, 2011-02-01 650V CoolMOS™ CFD Power Transistor IPx65R660CFD Package outlines Figure 3 Outlines TO-220 FullPAK, dimensions in mm/inches Final Data Sheet 16 Rev. 2.0, 2011-02-01 650V CoolMOS™ CFD Power Transistor IPx65R660CFD Package outlines Figure 4 Outlines TO-263, dimensions in mm/inches Final Data Sheet 17 Rev. 2.0, 2011-02-01 650V CoolMOS™ CFD Power Transistor IPx65R660CFD Package outlines Figure 5 Outlines TO-262, dimensions in mm/inches Final Data Sheet 18 Rev. 2.0, 2011-02-01 650V CoolMOS™ CFD Power Transistor IPx65R660CFD Package outlines TO247-3-21/-41/-44 DIM A A1 A2 b b1 b2 b3 b4 c D D1 D2 E E1 E2 E3 e N L L1 øP Q S MILLIMETERS MIN MAX 5.21 4.83 2.54 2.27 2.16 1.85 1.33 1.07 2.41 1.90 1.90 2.16 2.87 3.38 2.87 3.13 0.55 0.68 21.10 20.80 17.65 16.25 1.35 0.95 16.13 15.70 13.10 14.15 5.10 3.68 2.60 1.00 5.44 (BSC) 3 19.80 20.32 4.47 4.10 3.50 3.70 6.00 5.49 6.30 6.04 INCHES MIN 0.190 0.089 0.073 0.042 0.075 0.075 0.113 0.113 0.022 0.819 0.640 0.037 0.618 0.516 0.145 0.039 MAX 0.205 0.100 0.085 0.052 0.095 0.085 0.133 0.123 0.027 0.831 0.695 0.053 0.635 0.557 0.201 0.102 0.214 (BSC) 3 0.800 0.176 0.146 0.236 0.248 DOCUMENT NO. Z8B00003327 SCALE 0 0 55 7.5mm EUROPEAN PROJECTION 0.780 0.161 0.138 0.216 0.238 ISSUE DATE 09-07-2010 REVISION 05 Figure 6 Outlines TO-247, dimensions in mm/inches Final Data Sheet 19 Rev. 2.0, 2011-02-01 650V CoolMOS™ CFD Power Transistor IPx65R660CFD Revision History 8 Revision History Revision History: 2011-02-01, Rev. 2.0 Previous Revision: Revision 2.0 Subjects (major changes since last revision) Release of final data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Edition 2011-02-01 Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 20 Rev. 2.0, 2011-02-01