IPW90R120C3

IPW90R120C3 CoolMOS™ Power Transistor Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Worldwide best R DS,on in TO247 • Ultra low gate charge Product Summary V DS @ T J=25°C R DS(on),max @ T J=25°C Q g,typ 900 0.12 270 V Ω nC PG-TO247 CoolMOS™ 900V is designed for: • Quasi Resonant Flyback / Forward topologies • PC Silverbox and consumer applications • Industrial SMPS Type IPW90R120C3 Package PG-TO247 Marking 9R120C Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...400 V static AC (f>1 Hz) Power dissipation Operating and storage temperature Mounting torque Rev. 1.0 P tot T J, T stg M3 and M3.5 screws page 1 T C=25 °C T C=25 °C I D=8.8 A, V DD=50 V I D=8.8 A, V DD=50 V Value 36 23 96 1940 2.9 8.8 50 ±20 ±30 417 -55 ... 150 60 W °C Ncm 2008-07-30 A V/ns V mJ Unit A IPW90R120C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode d v /dt 4) Parameter Symbol Conditions IS I S,pulse dv /dt Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads R thJC R thJA leaded 1.6 mm (0.063 in.) from case for 10 s 0.3 62 K/W T C=25 °C Value 26 81 4 Values typ. max. V/ns Unit Unit A T sold - - 260 °C Electrical characteristics, at T J=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=250 µA V GS(th) I DSS V DS=V GS, I D=2.9 mA V DS=900 V, V GS=0 V, T j=25 °C V DS=900 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=26 A, T j=25 °C V GS=10 V, I D=26 A, T j=150 °C Gate resistance RG f =1 MHz, open drain 900 2.5 3 3.5 10 µA V - 50 0.10 100 0.12 nA Ω - 0.27 0.9 Ω Rev. 1.0 page 2 2008-07-30 IPW90R120C3 Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Effective output capacitance, energy related 5) Effective output capacitance, time related 6) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current 1) 2) 3) Values typ. max. Unit C iss C oss C o(er) V GS=0 V, V DS=100 V, f =1 MHz - 6800 330 200 - pF V GS=0 V, V DS=0 V to 500 V C o(tr) t d(on) tr t d(off) tf V DD=400 V, V GS=10 V, I D=26 A, R G=7.3 Ω 790 70 20 400 25 ns Q gs Q gd Qg V plateau V DD=400 V, I D=26 A, V GS=0 to 10 V - 32 115 270 4.7 tbd - nC V V SD t rr Q rr I rrm V GS=0 V, I F=26 A, T j=25 °C - 0.8 920 30 65 1.2 - V ns µC A V R=400 V, I F=I S, di F/dt =100 A/µs - J-STD20 and JESD22 Pulse width t p limited by T J,max Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. ISD≤ID, di/dt ≤100 A/µs, VDClink=400V, Vpeak