KMY10

Microwave Motion Sensor Description The KMY 10 is a microwave rader motion sensor based on the Doppler effect. It transmits a low energy microwave radiation at 9.35 GHz which is reflected by objects. If the object is moving relative to the sensor, a Doppler shift occurs. The shifted wave is mixed with the original wave, resulting in an output voltage. Features • • • • • • High sensitivity Low power consumption High reliability Small size Light weight Low cost Marking KMY 10 (or SMX-11)) Ordering Code License No. Special Package KMY 10 Typ KMY 10 Q62702-R309 Germany: Switzerland: Austria: BZT B129549H BAKOM 92.1340.H.P GZ 104 091-ZB/96 1) Previous type designation SMX-1. Pin Configuration 1 2 3 − VS (GND) VD (output voltage) + VS 5V Voltage Regulator - o/p + Notes: 1. The adjustment screw located on the top EHA07119 Dual OP-Amp 123 face of the sensor housing is used to set the oscillator frequency. This adjustment is made and secured during production and to ensure the correct operation of the device it must not be tampered with! 2. Only the pads marked 1; 2; 3, are predetermined solder pads and only these pads should be used to connect the device. Soldering or otherwise interfering with any other parts of the AF-circuit board will immediately invalidate any warranty on the device! 3. The KMY 10 is classified as an Electrostatic Discharge Sensitive Device. Handling precautions for such devices must be adhered to! 4. Regulations on the use of High frequency devices. The use of high frequency devices is regulated in most countries and certain frequencies can be subject to restrictions. The use of the KMY 10 should be clarified with the respective authorities in each country to ensure compliance with the prevalent legislation. Data Sheet 1 1999-04-01 KMY 10 Maximum Ratings Parameter Supply voltage Symbol Value 15 5 – 20 … + 60 – 50 … + 125 Unit V mA °C °C VIN Output current IOUT Operating temperature range TA Storage temperature range Tstg Electrical Characteristics at TA = 25 °C and VIN = 12 V, unless otherwise specified. Parameter Supply voltage Operating current Power at f0 Frequency Output voltage signal DC output voltage (offset) Output noise voltage 2) Frequency drift vs. temperature 3) Symbol min. Limit Values typ. 12 25 0 9.35 501) 2.5 10 ±6 ± 0.1 920 2 - 750 4 – +2 9.37 – – 20 – – – – – Hz s max. 15 V mA dBm GHz mV V mV MHz MHz 8 – – 9.33 – – – – – – – – Unit VIN IIN EIRP1 f0 Vout,0-peak V0 V N,0-peak dfT Frequency drift vs. operating dfV voltage Preamp voltage gain Preamp bandwidth first detection 1) Person at 5 m distance 2) With no object detected 3) Defined over – 20 °C … + 60 °C G B Time between power on until tp Data Sheet 2 1999-04-01 KMY 10 LF-Circuit Diagram +V 3 +9V 100 nF 78L05 +5V V CC V CC 1 MΩ 3.3 µF INPUT + V CC +8 5 - V CC +8 7 LM 358 1 MΩ 1 MΩ 3 - 6 2 2 B -4 A -4 1 LM 358 1 MΩ Pre-Amp OUTPUT 1 MΩ 1 33 k Ω + 150 pF 3.3 µF 33 k Ω + 3.3 µF EHA07094 1 1 Application Example 20 k Ω + 12 V Microwave Sensor + VIN KMY 10 Outp. GND 3 2 1 1 MΩ + - Setting of Detection Threshold (e.g. V = 6.5 V) + 12 V 10 k Ω - + 12 V + 12 V + 12 V +8 2 3 A -4 LM 358 +8 B -4 6 1 1 kΩ 5 + 1 MΩ 150 pF 33 k Ω 3.3 µ F + 330 k Ω Preamplifier (G V = 10) 2 MΩ + 10 nF 100 k Ω 7 DIS 2 TRG 6 THR 5 CTR 555 8 4 3 1 4.7 µF Monoflop (f p = 0.5 sec. - 10 sec.) Note: The influence of fluorescent light interference (100 Hz carrier) has to be reduced by the installation of an additional 100 Hz notch filter. Data Sheet 3 1999-04-01 + 3.3 µF 100 k Ω BCR 133 + 12 V + + 150 pF + 12 V 1 kΩ 10 k Ω LM 358 7 10 k Ω 1N4148 VCC RES Q GND 1 kΩ LED EHA07092 KMY 10 Typical Radiation Pattern 0 20 40 60 Typical Radiation Pattern EHA07096 Package Outline Special Package SIEMENS -%+ Pre-Amp Input GND +V Pre-Amp Output 1.6 approx. 17 14 3.4 20 4 34 ±0.1 42 3.4 EHA07098 26 1.6 1.5 11 Weight approx. 40 g 17 25 ±0.1 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. Data Sheet 4 Dimensions in mm 1999-04-01 11 Ø3 .8 19 ±0 .1 approx. 25 M8 x 0.5 R1