MMBT3904

SMBT3904...MMBT3904 NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S / SMBT3904U: Two (galvanic) internal isolated transistors with good matching in one package • Complementary types: SMBT3906... MMBT3906 • SMBT3904S / U: For orientation in reel see package information below • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 SMBT3904S/U C1 6 B2 5 E2 4 TR2 TR1 1 E1 2 B1 3 C2 EHA07178 Type SMBT3904/MMBT3904 SMBT3904S SMBT3904U 1Pb-containing Marking s1A s1A s1A 1=B Pin Configuration 2=E 3=C - Package SOT23 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 package may be available upon special request 1 2007-09-20 SMBT3904...MMBT3904 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipationTS ≤ 69°C TS ≤ tbd°C TS ≤ 115°C TS ≤ 105°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) SMBT3904/MMBT3904 SMBT3904S SMBT3904U 1For Symbol VCEO VCBO VEBO IC Ptot Value 40 60 6 200 330 250 250 330 150 -65 ... 150 Value ≤ 245 ≤ 140 ≤ 135 Unit V mA mW Tj Tstg Symbol RthJS °C Unit K/W calculation of RthJA please refer to Application Note Thermal Resistance 2 2007-09-20 SMBT3904...MMBT3904 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 40 V IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO V(BR)EBO ICBO hFE 60 6 - - 50 nA - Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 30 V, IE = 0 DC current gain1) IC = 100 µA, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 50 mA, VCE = 1 V IC = 100 mA, VCE = 1 V 40 70 100 60 30 VCEsat - 300 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VBEsat - 0.2 0.3 0.85 0.95 Base emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA 1Pulse 0.65 - test: t < 300µs; D < 2% 3 2007-09-20 SMBT3904...MMBT3904 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter AC Characteristics Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Delay time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Rise time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Storage time VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Fall time VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1 mA Noise figure IC = 100 µA, VCE = 5 V, f = 1 kHz, ∆ f = 200 Hz, RS = 1 kΩ F 5 dB tf 50 tstg 200 tr 35 td 35 ns Ceb 8 Ccb 3.5 pF fT 300 MHz Symbol min. Values typ. max. Unit 4 2007-09-20 SMBT3904...MMBT3904 Test circuits Delay and rise time +3.0 V 300 ns D = 2% +10.9 V 0 10 k Ω -0.5 V 275 Ω C