MMBT3906

SMBT3906/ MMBT3906 PNP Silicon Switching Transistor • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SMBT3904/ MMBT3904 (NPN) 3 2 1 VPS05161 Type SMBT3906/ MMBT3906 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipationTS = 71 °C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) 1For calculation of R Marking s2A Pin Configuration 1=B 2=E 3=C Package SOT23 Symbol VCEO VCBO VEBO IC Ptot Tj Tstg Symbol RthJS Value 40 40 5 200 330 150 -65 ... 150 Value ≤240 Unit V mA mW °C Unit K/W thJA please refer to Application Note Thermal Resistance 1 Jul-28-2003 SMBT3906/ MMBT3906 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 40 V IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO V(BR)EBO I CBO hFE 40 5 - - 50 nA - Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 30 V, IE = 0 DC current gain1) IC = 100 µA, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 50 mA, VCE = 1 V IC = 100 mA, VCE = 1 V 60 80 100 60 30 VCEsat - 300 V 0.25 0.4 0.85 0.95 Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VBEsat Base emitter saturation voltage-1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA 1Puls 0.65 - test: t ≤ 300µs, D = 2% 2 Jul-28-2003 SMBT3906/ MMBT3906 AC Characteristics Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit reverse voltage transf. ratio IC = 1 mA, VCE = 10 V, f = 1 kHz Short-circuit forward current transf. ratio IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit output admittance IC = 1 mA, VCE = 10 V, f = 1 kHz Delay time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Rise time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V Storage time VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1mA Fall time VCC = 3 V, IC = 10 mA, IB1 = IB2 = 1mA Noise figure IC = 100 µA, VCE = 5 V, f = 1 kHz, ∆ f = 200 Hz, RS = 1 kΩ F 4 dB tf 75 tstg 225 tr 35 td 35 ns h22e 3 60 µS h21e 100 400 h12e 0.1 10 10-4 h11e 2 12 kΩ Ceb 10 Ccb 4.5 pF fT 250 MHz 3 Jul-28-2003 SMBT3906/ MMBT3906 Test circuit Delay and rise time -3.0 V 275 Ω