MMBTA14

SMBTA14/MMBTA14 NPN Silicon Darlington Transistor • High collector current • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 3 1 2 Type SMBTA14/MMBTA14 Marking s1N 1=B Pin Configuration 2=E 3=C Package SOT23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipationTS ≤ 81 °C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point2) 1Pb-containing 2For Symbol VCES VCBO VEBO IC ICM IB IBM Ptot Tj Tstg Symbol RthJS Value 30 30 10 300 500 100 200 330 150 -65 ... 150 Value ≤ 210 Unit V mA mW °C Unit K/W package may be available upon special request calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-04-19 SMBTA14/MMBTA14 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-base breakdown voltage V(BR)CBO 30 V IC = 10 µA, IE = 0 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 V(BR)CES V(BR)EBO I CBO 30 10 - µA Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0 , TA = 150 °C I EBO h FE - 0.1 10 100 nA - Emitter-base cutoff current VEB = 10 V, IC = 0 - DC current gain1) IC = 10 mA, VCE = 5 V IC = 100 mA, V CE = 5 V 10000 20000 VCEsat VBEsat - 1.5 2 V Collector-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA - Base emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance VCB = 10 V, f = 100 MHz 1Pulse fT Ccb 125 - 3 - MHz pF test: t < 300µs; D < 2% 2 2007-04-19 SMBTA14/MMBTA14 DC current gain hFE = ƒ(IC) VCE = 5 V 10 6 h FE 5 SMBTA 13/14 EHP00829 Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 1000 10 3 SMBTA 13/14 EHP00826 ΙC mA 150 ˚C 25 ˚C -50 ˚C 10 5 5 125 ˚C 25 ˚C 10 2 5 -55 ˚C 10 4 5 10 1 5 10 3 10 -1 10 0 10 1 10 2 mA 10 3 10 0 0 0.5 1.0 V V CEsat 1.5 ΙC Base-emitter saturation voltage IC = ƒ(V BEsat), hFE = 1000 10 3 mA SMBTA 13/14 EHP00827 Collector cutoff current ICBO = ƒ(TA) VCBO = 30 V 4 SMBTA 13/14 EHP00828 10 nA ΙC 150 ˚C 25 ˚C -50 ˚C Ι CB0 10 3 5 typ max 10 2 5 10 2 5 10 1 5 10 1 5 10 0 0 1.0 2.0 V V BEsat 3.0 10 0 0 50 100 TA ˚C 150 3 2007-04-19 SMBTA14/MMBTA14 Transition frequency fT = ƒ(IC) VCE = 5 V, f = 200 MHz 10 3 MHz fT 5 CCB/CEB 15 13 11 SMBTA 13/14 EHP00825 Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB) 19 pF 10 2 CEB 9 5 7 5 3 CCB 10 1 10 0 5 10 1 5 10 2 mA 10 3 1 0 4 8 12 16 V 22 ΙC VCB/VEB Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 360 10 3 Ptot max 5 Ptot DC SMBTA 13/14 EHP00824 mW 300 270 D= tp T tp T Ptot 240 210 180 150 120 90 60 30 0 0 15 30 45 60 75 90 105 120 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 °C 150 TS 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 4 2007-04-19 Package SOT23 SMBTA14/MMBTA14 Package Outline 0.15 MIN. 1 ±0.1 0.1 MAX. 1.3 ±0.1 2.9 ±0.1 3 B 2.4 ±0.15 10˚ MAX. 0.4 +0.1 -0.05 1) 1 2 10˚ MAX. C 0.95 1.9 0.08...0.1 A 5 0...8˚ 0.25 M B C 0.2 M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s Pin 1 0.9 1.3 2005, June Date code (YM) BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.9 2.13 2.65 0.2 8 Pin 1 3.15 1.15 5 2007-04-19 SMBTA14/MMBTA14 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2007-04-19