Q62705-K5004

Giant Magneto Resistive Position Sensor Version 2.0 GMR B6 This angle sensor is based on the Giant Magneto Resistive (GMR) technology. It is outstanding for the huge tolerances it offers to the user in assembly. 2.6 max 10˚ max Features • GMR sensor in SMD package • Sensitive to the direction, not to the intensity of the magnetic field • Constant TC of basic resistance R and magneto resistance ∆R Applications • Rotation and linear sensing with large airgaps • Angle encoders • Contactless potentiometers • Incremental encoders Pin Configuration 6 3 B 2.9 ±0.1 1.9 0.6 +0.1 -0.05 6 5 4 2˚ ... 30˚ 1.1 max 0.08 ... 0.15 0.1 ±0.3 A 10˚ max 0.1 max M 1 2 3 0.2 0.35 ±0.15 0.3 -0.05 +0.1 0.25 M B 0.20 A Reflow soldering 0.8 0.3 1 4 R1 R3 0.5 0.45 OHS00429 0.9 R2 R4 1.2 3 Directions of internal magnetization GPW06957 2/5 Dimensions in mm 6, 3 5 (= 2) 1, 4 Type GMR B6 supply ground GMR bridge access Marking B Ordering Code Q62705-K5004 Data Sheet 1 2000-07-01 1.3 ±0.1 GMR B6 The GMR B6 is an angle sensor based on sputtered metallic multilayer technology. 4 resistors are monolithically integrated on 1 chip. They can be used as a fullbridge or, if 2 external resistors are added, as 2 halfbridges. The outstanding feature of this magnetic sensor is the fact, that it is sensitive to the orientation of the magnetic field and not to its intensity as long as the field is in a range between 5 … 15 kA/m. This means, the signal output of this sensor is independent of the sensor position relative to the magnet in lateral, axial or rotational direction in the range of several millimeters. Optimum results are achieved by using magnetic targets like permanent magnets or magnetic pole-wheels. There is no need for a biasing magnet! Due to the linear change of both, basic and field dependent part of the resistance vs. temperature, simple and efficient electronic compensation of TC (R, ∆R) is possible. 1 AED02956 ∆R )/2] RO Bridge Voltage [(VO ∗ N 0.5 Figure 1 Output Voltage of Half Bridges (V1, V4) and Full Bridge (V4 - V1) as a Function of the Magnetic Field Orientation Data Sheet S GMR B6 V4 0 V1 -0.5 V1- V4 -1 0 90 180 270 Angle Deg 360 2 2000-07-01 GMR B6 Maximum Ratings Parameter Operating temperature Storage temperature Supply voltage Thermal conductivity Magnetic field1) 1) Symbol Value – 40 … + 150 – 50 … + 150 7 >4 < 15 Unit °C °C V mW/K kA/m TA Tstg V1 GthC A Hrot larger fields may reduce the magnetoresistive effect irreversibly Characteristics (TA = 25 °C) Parameter Nominal supply voltage Basic resistance Magnetoresistive effect Hrot = 5 ... 15 kA/m Output signal fullbridge Offset voltage Temperature coefficient of basic resistance Temperature coefficient of magnetoresistance Temperature coefficient of magnetoresistive effect Application Hints The application mode of the GMR position sensor is preferably as a bridge or halfbridge circuit. In every case this type of circuit compensates for the TC of the resistance value R0. To compensate for the TC of the GMR effect ∆R/R0, if there is the necessity, is left to the application circuit and can be done for example with a NIC circuit. When operated over a complete 360° turn, a total signal of ≈ 20 mV/V is achieved at 25 °C with a halfbridge. The output signal is doubled to of ≈ 40 mV/V when a fullbridge circuit is used. In the case of linear position sensing, the electrical circuit remains unchanged. Symbol Value 5 > 700 >4 > 200