SDB06S60_05

SDB06S60 Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • Ideal diode for Power Factor Correction up to 1200W 1) • No forward recovery thinQ! SiC Schottky Diode Product Summary VRRM Qc IF 600 21 6 D2PAK V nC A Type SDB06S60 Package D2PAK Ordering Code Q67040-S4370 Marking D06S60 Pin 1 Pin 2 Pin 3 n.c. C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous forward current, TC=100°C RMS forward current, f=50Hz TC=25°C, tp=10ms Value 6 8.4 21.5 28 60 2.3 600 600 57.6 -55... +175 Unit A IF IFRMS Surge non repetitive forward current, sine halfwave IFSM Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 IFRM IFMAX i2dt VRRM VRSM Ptot Tj , Tstg Non repetitive peak forward current tp=10µs, TC=25°C i 2t value, TC=25°C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating and storage temperature A²s V W °C Rev. 2.0 Page 1 2005-02-17 SDB06S60 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: P-TO263-3-2: @ min. footprint P-TO263-3-2: @ 6 cm 2 cooling area 2) P-TO252-3-1: @ min. footprint P-TO252-3-1: @ 6 cm 2 cooling area 2) Symbol min. RthJC RthJA RthJA Values typ. 35 max. 2.6 62 62 75 50 Unit - K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Diode forward voltage IF=6A, Tj=25°C IF=6A, Tj=150°C Symbol min. VF IR - Values typ. max. Unit V 1.5 1.7 20 50 1.7 2.1 µA 200 1000 Reverse current V R=600V, T j=25°C V R=600V, T j=150°C 1CCM, V = 85VAC, T = 150°C, T =100°C, η = 93%, ∆ I = 30% IN j C IN 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 2.0 Page 2 2005-02-17 SDB06S60 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. AC Characteristics Total capacitive charge V R=400V, IF=6A, diF/dt=200A/µs, T j=150°C Unit max. nC ns pF typ. 21 n.a. Qc trr C - Switching time V R=400V, IF=6A, diF/dt=200A/µs, T j=150°C Total capacitance V R=0V, T C=25°C, f=1MHz V R=300V, T C=25°C, f=1MHz V R=600V, T C=25°C, f=1MHz - 300 20 15 - Rev. 2.0 Page 3 2005-02-17 SDB06S60 1 Power dissipation Ptot = f (TC) 60 2 Diode forward current IF = f (TC) parameter: Tj≤175 °C 6.5 W 50 45 A 5.5 5 4.5 Ptot 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 IF °C 180 TC 4 3.5 3 2.5 2 1.5 1 0.5 0 0 20 40 60 80 100 120 140 °C 180 TC 3 Typ. forward characteristic IF = f (VF) parameter: Tj , tp = 350 µs 12 4 Typ. forward power dissipation vs. average forward current PF(AV)=f(IF) TC=100°C, d = tp/T W 28 A 10 9 8 PF(AV) 150°C 125°C 100°C 25°C -40°C 24 22 20 18 16 14 12 10 8 6 4 2 d=0.1 d=0.2 d=0.5 d=1 IF 7 6 5 4 3 2 1 0 0 0.5 1 1.5 V VF 2.5 0 0 2 4 6 8 A 12 IF(AV) Rev. 2.0 Page 4 2005-02-17 SDB06S60 5 Typ. reverse current vs. reverse voltage I R=f(VR) 10 2 6 Transient thermal impedance ZthJC = f (t p) parameter : D = t p/T 10 1 SDP06S60 µA 10 1 K/W 10 0 ZthJC 150°C 125°C 100°C 25°C 10 0 10 -1 IR D = 0.50 10 -1 10 -2 0.20 0.10 0.05 0.02 0.01 10 -2 10 -3 single pulse 10 -3 100 150 200 250 300 350 400 450 500 V 600 VR 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 7 Typ. capacitance vs. reverse voltage C= f(V R) 8 Typ. C stored energy EC=f(V R) 3.5 parameter: TC = 25 °C, f = 1 MHz 250 µJ pF 2.5 150 C EC 2 1.5 1 0.5 1 2 3 10 V VR 100 50 00 10 10 10 0 0 100 200 300 400 V VR 600 Rev. 2.0 Page 5 2005-02-17 SDB06S60 9 Typ. capacitive charge vs. current slope Q c=f(diF /dt) parameter: Tj = 150 °C 22 nC 18 16 IF*2 IF IF*0.5 Qc 14 12 10 8 6 4 2 0 100 200 300 400 500 600 700 800 A/µs 1000 diF /dt Rev. 2.0 Page 6 2005-02-17 SDB06S60 PG-TO220-3-45 (D2Pak): Outline Dimensions in mm/inches Rev. 2.0 page 7 2005-02-17 SDB06S60 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 Page 8 2005-02-17