SDB20S30

SDB20S30 Silicon Carbide Schottky Diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • No forward recovery D2PAK 1 2 3 thinQ! SiC Schottky Diode Product Summary VRRM Qc IF 300 23 2x10 V nC A Type SDB20S30 Package D2PAK Ordering Code Q67040-S4374 Marking D20S30 Maximum Ratings, at Tj = 25 °C, unless otherwise specified (per leg) Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz TC=25°C, tp=10ms Symbol IF IFRMS Value 10 14 36 45 100 6.5 300 300 65 -55... +175 Unit A Surge non repetitive forward current, sine halfwave IFSM Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 IFRM IFMAX i2dt VRRM VRSM Ptot Tj , Tstg Non repetitive peak forward current tp=10µs, TC=25°C i 2t value, TC=25°C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, single diode mode , TC=25°C Operating and storage temperature A²s V W °C Rev. 1.2 Page 1 2007-03-27 SDB20S30 Thermal Characteristics Parameter Characteristics Symbol min. Values typ. max. Unit Thermal resistance, junction - case (per leg) SMD version, device on PCB: @ min. footprint P-TO263-3-2: @ 6 cm 2 cooling area 1) RthJC RthJA - 35 2.3 62 - K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified (per leg) Parameter Static Characteristics Diode forward voltage IF=10A, Tj=25°C IF=10A, Tj=150°C Symbol min. VF IR - Values typ. max. Unit V 1.5 1.5 15 20 1.7 1.9 µA 200 1000 Reverse current V R=300V, T j=25°C V R=300V, T j=150°C 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 1.2 Page 2 2007-03-27 SDB20S30 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified (per leg) Parameter Symbol Values min. AC Characteristics Total capacitive charge 1) V R=200V, IF=10A, diF /dt=-200A/µs, Tj =150°C Unit typ. 23 n.a. max. nC ns pF Qc t rr C - Switching time2) V R=200V, IF=10A, diF /dt=-200A/µs, Tj =150°C Total capacitance V R=0V, T C=25°C, f=1MHz V R=150V, T C=25°C, f=1MHz V R=300V, T C=25°C, f=1MHz - 600 55 40 - Rev. 1.2 Page 3 2007-03-27 SDB20S30 1 Power dissipation (per leg) Ptot = f (TC) 70 2 Diode forward current (per leg) IF= f (TC) parameter: Tj≤175 °C 11 W A 9 8 60 55 50 Ptot 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 IF °C 180 TC 45 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 °C 180 TC 3 Typ. forward characteristic (per leg) IF = f (VF) parameter: Tj , tp = 350 µs 20 4 Typ. forward power dissipation vs. average forward current (per leg) PF(AV)=f(IF) TC=100°C, d = tp/T 32 A 16 W 24 14 PF(AV) IF 12 10 8 6 4 2 0 0.6 20 16 -40°C 25°C 100°C 125°C 150°C 12 d=1 d=0.5 d=0.2 d=0.1 8 4 0.8 1 1.2 1.4 1.6 1.8 2.2 V VF 0 0 2 4 6 8 10 12 14 18 A IF(AV) Rev. 1.2 Page 4 2007-03-27 SDB20S30 5 Typ. reverse current vs. reverse voltage (per leg)IR=f(VR ) 10 2 6 Transient thermal impedance (per leg) ZthJC = f (t p) parameter : D = t p/T µA 10 1 SDP20S30 K/W 10 1 10 0 10 0 ZthJC 10 -1 IR 10 -1 D = 0.50 10 -2 150°C 125°C 100°C 25°C 10 -2 0.20 0.10 0.05 single pulse 0.02 0.01 10 -3 10 -3 10 -4 50 100 150 200 V VR 300 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 7 Typ. capacitance vs. reverse voltage (per leg)C= f(VR) parameter: TC = 25 °C, f = 1 MHz 450 8 Typ. C stored energy (per leg) EC=f(V R) 2.5 pF µJ 350 300 EC 1 2 3 10 V VR 1.5 C 250 200 1 150 100 50 00 10 0 0 0.5 10 10 50 100 150 200 V VR 300 Rev. 1.2 Page 5 2007-03-27 SDB20S30 9 Typ. capacitive charge vs. current slope (per leg)Qc=f(diF/dt) parameter: Tj = 150 °C 22 nC 18 16 IF*2 IF *0.5 IF Qc 14 12 10 8 6 4 2 0 100 200 300 400 500 600 700 800 A/µs 1000 diF /dt Rev. 1.2 Page 6 2007-03-27 SDB20S30 PG-TO220-3-45 (D2Pak): Outline Dimensions in mm/inches Rev. 2.1 page 7 2009-01-07 SDB20S30 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.2 Page 8 2007-03-27