SDD04S60

SDP04S60, SDD04S60 SDT04S60 Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • Ideal diode for Power Factor Correction up to 800W 1) • No forward recovery PG-TO220-2-2. thinQ! SiC Schottky Diode Product Summary VRRM Qc IF 600 13 4 P-TO220 V nC A P-TO252 Type SDP04S60 SDD04S60 SDT04S60 Package P-TO220-3 P-TO252-3 PG-TO220-2-2. Ordering Code Q67040-S4369 Q67040-S4368 Q67040-S4445 Marking D04S60 D04S60 D04S60 Pin 1 n.c. Pin 2 C Pin 3 A n.c. A C C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Symbol Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz TC=25°C, tp=10ms Value 4 5.6 12.5 18 40 0.78 600 600 36.5 -55... +175 Unit A IF IFRMS Surge non repetitive forward current, sine halfwave IFSM Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 IFRM IFMAX i2dt VRRM VRSM Ptot Tj , Tstg Page 1 Non repetitive peak forward current tp=10µs, TC=25°C i 2t value, TC=25°C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating and storage temperature Rev. 2.5 A²s V W °C 2008-06-02 SDP04S60, SDD04S60 SDT04S60 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: PG-TO252-3-1: @ min. footprint PG-TO252-3-1: @ 6 cm 2 cooling area 2) Symbol min. RthJC RthJA RthJA Values typ. max. 4.1 62 75 50 Unit - K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Diode forward voltage IF=4A, Tj=25°C IF=4A, Tj=150°C Symbol min. VF IR - Values typ. max. Unit V 1.7 2 15 40 1.9 2.4 µA 200 1000 Reverse current V R=600V, T j=25°C V R=600V, T j=150°C 1CCM, V = 85VAC, T = 150°C, T =100°C, η = 93%, ∆ I = 30% IN j C IN 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 2.5 Page 2 2008-06-02 SDP04S60, SDD04S60 SDT04S60 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. AC Characteristics Total capacitive charge V R=400V, IF=4A, diF/dt=200A/µs, T j=150°C Unit max. nC ns pF typ. 13 n.a. Qc trr C - Switching time V R=400V, IF=4A, diF/dt=200A/µs, T j=150°C Total capacitance V R=0V, T C=25°C, f=1MHz V R=300V, T C=25°C, f=1MHz V R=600V, T C=25°C, f=1MHz - 150 10 7 - Rev. 2.5 Page 3 2008-06-02 SDP04S60, SDD04S60 SDT04S60 1 Power dissipation Ptot = f (TC) 40 2 Diode forward current IF = f (TC) parameter: Tj≤175 °C 4.5 W A 30 3.5 3 Ptot IF 2.5 2 1.5 1 0.5 0 0 25 20 15 10 5 0 0 20 40 60 80 100 120 140 °C 180 TC 20 40 60 80 100 120 140 °C 180 TC 3 Typ. forward characteristic IF = f (VF) parameter: Tj , tp = 350 µs 8 4 Typ. forward power dissipation vs. average forward current PF(AV)=f(IF) TC=100°C, d = tp/T 18 A -40°C 25°C 100°C 125°C 150°C W 6 14 PF(AV) 12 10 IF 5 4 8 3 6 2 4 2 0 0 1 d=0.1 d=0.2 d=0.5 d=1 0 0 0.5 1 1.5 2 2.5 V VF 3.5 1 2 3 4 5 A 7 IF(AV) Rev. 2.5 Page 4 2008-06-02 SDP04S60, SDD04S60 SDT04S60 5 Typ. reverse current vs. reverse voltage I R=f(VR) 10 2 6 Transient thermal impedance ZthJC = f (t p) parameter : D = t p/T 10 1 SDP04S60 µA 10 1 K/W 10 0 10 0 ZthJC 10 -1 IR 10 -1 25°C 100°C 125°C 150°C D = 0.50 10 -2 0.20 0.10 single pulse 0.05 0.02 0.01 10 -2 10 -3 10 -3 100 200 300 400 V VR 600 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 7 Typ. capacitance vs. reverse voltage C= f(V R) 8 Typ. C stored energy EC=f(V R) 2 parameter: TC = 25 °C, f = 1 MHz 125 µJ pF 1.6 1.4 75 EC 1 2 3 10 V VR 1.2 1 C 50 0.8 0.6 25 0.4 0.2 00 10 10 10 0 0 100 200 300 400 V VR 600 Rev. 2.5 Page 5 2008-06-02 SDP04S60, SDD04S60 SDT04S60 9 Typ. capacitive charge vs. current slope Q c=f(diF /dt) parameter: Tj = 150 °C 14 nC IF*2 IF IF *0.5 10 Qc 8 6 4 2 0 100 200 300 400 500 600 700 800 A/µs 1000 diF /dt Rev. 2.5 Page 6 2008-06-02 SDP04S60, SDD04S60 SDT04S60 P-TO220-3-1, P-TO220-3-21 Rev. 2.5 Page 7 2008-06-02 SDP04S60, SDD04S60 SDT04S60 P-TO252-3-1, P-TO252-3-11, P-TO252-3-21 (D-Pak) Rev. 2.5 Page 7 2008-06-02 SDP04S60, SDD04S60 SDT04S60 PG-TO-220-2-2 Rev. 2.5 Page 8 2008-06-02 SDP04S60, SDD04S60 SDT04S60 Rev. 2.5 Page 9 2008-06-02