SDP06S60_08

SDP06S60 SDT06S60 Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • Ideal diode for Power Factor Correction up to 1200W 1) • No forward recovery thinQ! SiC Schottky Diode Product Summary VRRM Qc IF 600 21 6 P-TO220 V nC A PG-TO220-2-2. Type SDP06S60 SDT06S60 Package P-TO220-3 PG-TO220-2-2. Ordering Code Q67040-S4371 Q67040-S4446 Marking D06S60 D06S60 Pin 1 n.c. Pin 2 C Pin 3 A C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Symbol Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz TC=25°C, tp=10ms Value 6 8.4 21.5 28 60 2.3 600 600 57.6 -55... +175 Unit A IF IFRMS Surge non repetitive forward current, sine halfwave IFSM Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 IFRM IFMAX i2dt VRRM VRSM Ptot Tj , Tstg Page 1 Non repetitive peak forward current tp=10µs, TC=25°C i 2t value, TC=25°C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating and storage temperature Rev. 2.4 A²s V W °C 2008-06-02 SDP06S60 SDT06S60 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded RthJC RthJA Symbol min. - Values typ. max. 2.6 62 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Diode forward voltage IF=6A, Tj=25°C IF=6A, Tj=150°C Symbol min. VF IR - Values typ. max. Unit V 1.5 1.7 20 50 1.7 2.1 µA 200 1000 Reverse current V R=600V, T j=25°C V R=600V, T j=150°C 1CCM, V = 85VAC, T = 150°C, T =100°C, η = 93%, ∆ I = 30% IN j C IN 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 2.4 Page 2 2008-06-02 SDP06S60 SDT06S60 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. AC Characteristics Total capacitive charge V R=400V, IF=6A, diF/dt=200A/µs, T j=150°C Unit max. nC ns pF typ. 21 n.a. Qc trr C - Switching time V R=400V, IF=6A, diF/dt=200A/µs, T j=150°C Total capacitance V R=0V, T C=25°C, f=1MHz V R=300V, T C=25°C, f=1MHz V R=600V, T C=25°C, f=1MHz - 300 20 15 - Rev. 2.4 Page 3 2008-06-02 SDP06S60 SDT06S60 1 Power dissipation Ptot = f (TC) 60 2 Diode forward current IF = f (TC) parameter: Tj≤175 °C 6.5 W 50 45 A 5.5 5 4.5 Ptot 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 IF °C 180 TC 4 3.5 3 2.5 2 1.5 1 0.5 0 0 20 40 60 80 100 120 140 °C 180 TC 3 Typ. forward characteristic IF = f (VF) parameter: Tj , tp = 350 µs 12 4 Typ. forward power dissipation vs. average forward current PF(AV)=f(IF) TC=100°C, d = tp/T W 28 A 10 9 8 PF(AV) 150°C 125°C 100°C 25°C -40°C 24 22 20 18 16 14 12 10 8 6 4 2 d=0.1 d=0.2 d=0.5 d=1 IF 7 6 5 4 3 2 1 0 0 0.5 1 1.5 V VF 2.5 0 0 2 4 6 8 A 12 IF(AV) Rev. 2.4 Page 4 2008-06-02 SDP06S60 SDT06S60 5 Typ. reverse current vs. reverse voltage I R=f(VR) 10 2 6 Transient thermal impedance ZthJC = f (t p) parameter : D = t p/T 10 1 SDP06S60 µA 10 1 K/W 10 0 ZthJC 150°C 125°C 100°C 25°C 10 0 10 -1 IR D = 0.50 10 -1 10 -2 0.20 0.10 0.05 0.02 0.01 10 -2 10 -3 single pulse 10 -3 100 150 200 250 300 350 400 450 500 V 600 VR 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 7 Typ. capacitance vs. reverse voltage C= f(V R) 8 Typ. C stored energy EC=f(V R) 3.5 parameter: TC = 25 °C, f = 1 MHz 250 µJ pF 2.5 150 C EC 2 1.5 1 0.5 1 2 3 10 V VR 100 50 00 10 10 10 0 0 100 200 300 400 V VR 600 Rev. 2.4 Page 5 2008-06-02 SDP06S60 SDT06S60 9 Typ. capacitive charge vs. current slope Q c=f(diF /dt) parameter: Tj = 150 °C 22 nC 18 16 IF*2 IF IF*0.5 Qc 14 12 10 8 6 4 2 0 100 200 300 400 500 600 700 800 A/µs 1000 diF /dt Rev. 2.4 Page 6 2008-06-02 SDP06S60 SDT06S60 P-TO220-3-1, P-TO220-3-21 Rev. 2.4 Page 7 2008-06-02 SDP06S60 SDT06S60 PG-TO-220-2-2 Rev. 2.4 Page 8 2008-06-02 SDP06S60 SDT06S60 Rev. 2.4 Page 9 2008-06-02