SDP20S30_10

SDP20S30 Silicon Carbide Schottky Diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • No forward recovery 1 2 3 thinQ! SiC Schottky Diode Product Summary VRRM Qc IF 300 23 2x10 P-TO220 V nC A Type SDP20S30 Package P-TO220-3 Ordering Code Q67040-S4419 Marking D20S30 Maximum Ratings, at Tj = 25 °C, unless otherwise specified (per leg) Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz TC=25°C, tp=10ms Symbol IF IFRMS Value 10 14 36 45 100 6.5 300 300 65 -55... +175 Unit A Surge non repetitive forward current, sine halfwave IFSM Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 IFRM IFMAX i2dt VRRM VRSM Ptot Tj , Tstg Non repetitive peak forward current tp=10µs, TC=25°C i 2t value, TC=25°C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, single diode mode , TC=25°C Operating and storage temperature A²s V W °C Rev. 1.5 Page 1 2009-11-25 SDP20S30 Thermal Characteristics Parameter Characteristics Symbol min. Values typ. max. Unit Thermal resistance, junction - case (per leg) RthJC - - 2.3 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified (per leg) Parameter Static Characteristics Diode forward voltage IF=10A, Tj=25°C IF=10A, Tj=150°C Symbol min. VF IR - Values typ. max. Unit V 1.5 1.5 15 20 1.7 1.9 µA 200 1000 Reverse current V R=300V, T j=25°C V R=300V, T j=150°C 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 1.5 Page 2 2009-11-25 SDP20S30 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified (per leg) Parameter Symbol Values min. AC Characteristics Total capacitive charge 1) V R=200V, IF=10A, diF /dt=-200A/µs, Tj =150°C Unit typ. 23 n.a. max. nC ns pF Qc t rr C - Switching time2) V R=200V, IF=10A, diF /dt=-200A/µs, Tj =150°C Total capacitance V R=0V, T C=25°C, f=1MHz V R=150V, T C=25°C, f=1MHz V R=300V, T C=25°C, f=1MHz - 600 55 40 - Rev. 1.5 Page 3 2009-11-25 SDP20S30 1 Power dissipation (per leg) Ptot = f (TC) 70 2 Diode forward current (per leg) IF= f (TC) parameter: Tj≤175 °C 11 W A 9 8 60 55 50 Ptot 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 IF °C 180 TC 45 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 °C 180 TC 3 Typ. forward characteristic (per leg) IF = f (VF) parameter: Tj , tp = 350 µs 20 4 Typ. forward power dissipation vs. average forward current (per leg) PF(AV)=f(IF) TC=100°C, d = tp/T 32 A 16 W 24 14 PF(AV) IF 12 10 8 6 4 2 0 0.6 20 16 -40°C 25°C 100°C 125°C 150°C 12 d=1 d=0.5 d=0.2 d=0.1 8 4 0.8 1 1.2 1.4 1.6 1.8 2.2 V VF 0 0 2 4 6 8 10 12 14 18 A IF(AV) Rev. 1.5 Page 4 2009-11-25 SDP20S30 5 Typ. reverse current vs. reverse voltage (per leg)IR=f(VR ) 10 2 6 Transient thermal impedance (per leg) ZthJC = f (t p) parameter : D = t p/T µA 10 1 SDP20S30 K/W 10 1 10 0 10 0 ZthJC 10 -1 IR 10 -1 D = 0.50 10 -2 150°C 125°C 100°C 25°C 10 -2 0.20 0.10 0.05 single pulse 0.02 0.01 10 -3 10 -3 10 -4 50 100 150 200 V VR 300 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 7 Typ. capacitance vs. reverse voltage (per leg)C= f(VR) parameter: TC = 25 °C, f = 1 MHz 450 8 Typ. C stored energy (per leg) EC=f(V R) 2.5 pF µJ 350 300 EC 1 2 3 10 V VR 1.5 C 250 200 1 150 100 50 00 10 0 0 0.5 10 10 50 100 150 200 V VR 300 Rev. 1.5 Page 5 2009-11-25 SDP20S30 9 Typ. capacitive charge vs. current slope (per leg)Qc=f(diF/dt) parameter: Tj = 150 °C 22 nC 18 16 IF*2 IF *0.5 IF Qc 14 12 10 8 6 4 2 0 100 200 300 400 500 600 700 800 A/µs 1000 diF /dt Rev. 1.5 Page 6 2009-11-25 SDP20S30 P-TO220-3-1, P-TO220-3-21 Rev. 1.5 Page 7 2009-11-25 SDP20S30 Rev. 1.5 Page 8 2009-11-25