SDT02S60

SDT02S60 Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • No forward recovery thinQ! SiC Schottky Diode Product Summary VRRM Qc IF 600 4.6 2 P-TO220-2-2. V nC A Type SDT02S60 Package P-TO220-2-2. Ordering Code Q67040-S4511 Marking D02S60 Pin 1 C Pin 2 A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz TC=25°C, tp=10ms Symbol IF IFRMS Value 2 2.8 4.1 7.3 17 0.08 600 600 15 -55... +175 Unit A Surge non repetitive forward current, sine halfwave IFSM Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 IFRM IFMAX ∫i2dt VRRM VRSM Ptot Tj , Tstg Non repetitive peak forward current tp=10µs, TC=25°C i 2t value, TC=25°C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating and storage temperature A²s V W °C Rev. 2.0 Page 1 2004-03-22 SDT02S60 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded RthJC RthJA 10 62 K/W Symbol min. Values typ. max. Unit Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Diode forward voltage IF=2A, Tj=25°C IF=2A, Tj=150°C Symbol min. VF IR - Values typ. max. Unit V 1.75 2.2 7 30 2 2.6 µA 100 500 Reverse current V R=600V, T j=25°C V R=600V, T j=150°C Rev. 2.0 Page 2 2004-03-22 SDT02S60 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. AC Characteristics Total capacitive charge V R=400V, IF=2A, diF/dt=200A/µs, T j=150°C Unit max. nC ns pF typ. 4.6 n.a. Qc t rr C - Switching time V R=400V, IF=2A, diF/dt=200A/µs, T j=150°C Total capacitance V R=1V, T C=25°C, f=1MHz V R=300V, T C=25°C, f=1MHz V R=600V, T C=25°C, f=1MHz - 50 5.2 5.0 - Rev. 2.0 Page 3 2004-03-22 SDT02S60 1 Power dissipation Ptot = f (TC) 16 2 Diode forward current IF = f (TC) parameter: Tj≤175 °C 2.2 W A 1.8 12 1.6 Ptot IF °C 180 TC 10 1.4 1.2 8 1 6 0.8 0.6 0.4 2 0.2 20 40 60 80 100 120 140 0 0 20 40 60 80 100 120 140 4 0 0 °C 180 TC 3 Typ. forward characteristic IF = f (VF) parameter: Tj , tp = 350 µs 4 4 Typ. forward power dissipation vs. average forward current PF(AV)=f(IF) TC=100°C, d = tp/T 7 A 150°C 100°C 25°C W 3 IF 2.5 PF(AV) 5 d=0.1 d=0.2 d=0.5 d=1 4 2 3 1.5 2 1 0.5 1 0 0 0.5 1 1.5 2 2.5 3 V VF 4 0 0 0.5 1 1.5 2 A 3 IF(AV) Rev. 2.0 Page 4 2004-03-22 SDT02S60 5 Typ. reverse current vs. reverse voltage I R=f(VR) 10 2 6 Transient thermal impedance ZthJC = f (t p) parameter : D = t p/T 10 2 SDT02S60 µA 10 1 K/W 10 1 ZthJC IR 10 0 150°C 125°C 100°C 25°C 10 0 10 -1 10 -1 D = 0.50 0.20 0.10 0.05 single pulse 0.02 0.01 10 -2 10 -2 10 -3 10 -3 50 150 250 350 450 V VR 600 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 7 Typ. capacitance vs. reverse voltage C= f(V R) parameter: TC = 25 °C, f = 1 MHz pF 26 8 Typ. C stored energy EC=f(V R) 1.2 µJ 1 0.9 22 20 18 C 16 14 12 10 8 6 4 2 01 10 10 2 EC 10 3 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 V VR 0 0 100 200 300 400 V VR 600 Rev. 2.0 Page 5 2004-03-22 SDT02S60 9 Typ. capacitive charge vs. current slope Q c=f(diF /dt) parameter: Tj = 150 °C 6 IF*2 nC IF Qc 4 IF*0.5 3 2 1 0 100 200 300 400 500 600 700 800 A/µs 1000 diF/dt Rev. 2.0 Page 6 2004-03-22 SDT02S60 TO-220-2-2 A P D U H B V F W J G E symbol min A B C D E F G H J K L M N P T U V W 9.70 15.30 0.65 3.55 2.60 9.00 13.00 17.20 4.40 0.40 [mm] max 10.10 15.90 0.85 3.85 3.00 9.40 14.00 17.80 4.80 0.60 min 0.3819 0.6024 0.0256 0.1398 0.1024 0.3543 0.5118 0.6772 0.1732 0.0157 N dimensions [inch] max 0.3976 0.6260 0.0335 0.1516 0.1181 0.3701 0.5512 0.7008 0.1890 0.0236 1.05 typ. 2.54 typ. 4.4 typ. 1.10 1.40 2.4 typ. 6.6 typ. 13.0 typ. 7.5 typ. 0.00 0.40 0.41 typ. 0.1 typ. 0.173 typ. 0.0433 0.0551 0.095 typ. 0.26 typ. 0.51 typ. 0.295 typ. 0.0000 0.0157 X L C M T K X Rev. 2.0 Page 7 2004-03-22 SDT02S60 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 Page 8 2004-03-22