SDT08S60

SDT08S60 Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • No forward recovery thinQ! SiC Schottky Diode Product Summary VRRM Qc IF 600 24 8 P-TO220-2-2. V nC A Type SDT08S60 Package P-TO220-2-2. Ordering Code Q67040S4647 Marking D08S60 Pin 1 Pin 2 C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz TC=25°C, tp=10ms Symbol IF IFRMS Value 8 11.3 26 32 80 3.4 600 600 65 -55... +175 Unit A Surge non repetitive forward current, sine halfwave IFSM Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 IFRM IFMAX ∫i2dt VRRM VRSM Ptot Tj , Tstg Non repetitive peak forward current tp=10µs, TC=25°C i 2t value, TC=25°C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating and storage temperature A²s V W °C Rev. 2.0 Page 1 2004-03-18 SDT08S60 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded RthJC RthJA 2.3 62 K/W Symbol min. Values typ. max. Unit Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Diode forward voltage IF=8A, Tj=25°C IF=8A, Tj=150°C Symbol min. VF IR - Values typ. max. Unit V 1.5 1.7 28 70 1.7 2.1 µA 300 1500 Reverse current V R=600V, T j=25°C V R=600V, T j=150°C Rev. 2.0 Page 2 2004-03-18 SDT08S60 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. AC Characteristics Total capacitive charge V R=400V, IF=8A, diF/dt=200A/µs, T j=150°C Unit max. nC ns pF typ. 24 n.a Qc trr C - Switching time V R=400V, IF=8A, diF/dt=200A/µs, T j=150°C Total capacitance V R=0V, T C=25°C, f=1MHz V R=300V, T C=25°C, f=1MHz V R=600V, T C=25°C, f=1MHz - 280 26 18 - Rev. 2.0 Page 3 2004-03-18 SDT08S60 1 Power dissipation Ptot = f (TC) 70 SDT08S60 2 Diode forward current IF = f (TC) parameter: Tj≤175 °C W 9 A 7 6 60 55 50 Ptot 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 °C 190 IF 5 4 3 2 1 0 0 45 20 40 60 80 100 120 140 TC °C 180 TC 3 Typ. forward characteristic IF = f (VF) 4 Typ. forward power dissipation vs. average forward current PF(AV)=f(IF) TC=100°C, d = tp/T 36 parameter: Tj , tp = 350 µs 16 A 12 PF(AV) 150°C 125°C 100°C 25°C -40°C W 28 24 20 d=1 d=0,5 d=0,2 d=0,1 IF 10 8 16 6 12 4 8 4 0 0 2 0 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 V 2.5 VF 2 4 6 8 10 12 16 A IF(AV) Rev. 2.0 Page 4 2004-03-18 SDT08S60 5 Typ. reverse current vs. reverse voltage I R=f(VR) 10 2 6 Transient thermal impedance ZthJC = f (t p) parameter : D = t p/T µA 10 1 K/W 10 1 SDT08S60 10 0 IR 10 0 150°C 125°C 100°C 25°C ZthJC 10 -1 10 -2 10 -1 D = 0.50 0.20 0.10 0.05 single pulse 0.02 0.01 10 -3 10 -2 10 -4 10 -3 100 150 200 250 300 350 400 450 500 V 600 VR 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 7 Typ. capacitance vs. reverse voltage C= f(V R) 8 Typ. C stored energy EC=f(V R) 5 parameter: TC = 25 °C, f = 1 MHz pF 300 µJ 4 3.5 240 220 EC 1 2 3 10 V VR 200 180 160 140 120 100 80 60 40 20 00 10 10 10 3 2.5 2 1.5 1 0.5 0 0 C 100 200 300 400 V VR 600 Rev. 2.0 Page 5 2004-03-18 SDT08S60 9 Typ. capacitive charge vs. current slope Q c=f(diF /dt) parameter: Tj = 150 °C 35 nC IF*2 IF*0.5 25 IF Qc 20 15 10 5 0 0 100 200 300 400 500 600 700 800A/µs 1000 diF /dt Rev. 2.0 Page 6 2004-03-18 SDT08S60 TO-220-2-2 A P D U H B V F W J G E symbol min A B C D E F G H J K L M N P T U V W 9.70 15.30 0.65 3.55 2.60 9.00 13.00 17.20 4.40 0.40 [mm] max 10.10 15.90 0.85 3.85 3.00 9.40 14.00 17.80 4.80 0.60 min 0.3819 0.6024 0.0256 0.1398 0.1024 0.3543 0.5118 0.6772 0.1732 0.0157 N dimensions [inch] max 0.3976 0.6260 0.0335 0.1516 0.1181 0.3701 0.5512 0.7008 0.1890 0.0236 1.05 typ. 2.54 typ. 4.4 typ. 1.10 1.40 2.4 typ. 6.6 typ. 13.0 typ. 7.5 typ. 0.00 0.40 0.41 typ. 0.1 typ. 0.173 typ. 0.0433 0.0551 0.095 typ. 0.26 typ. 0.51 typ. 0.295 typ. 0.0000 0.0157 X L C M T K X Rev. 2.0 Page 7 2004-03-18 SDT08S60 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 Page 8 2004-03-18