SDT10S60_08

SDT10S60 Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • No forward recovery thinQ! SiC Schottky Diode Product Summary VRRM Qc IF 600 29 10 PG-TO220-2-2. V nC A Type SDT10S60 Package PG-TO220-2-2. Ordering Code Q67040S4643 Marking D10S60 Pin 1 Pin 2 C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz TC=25°C, tp=10ms Symbol IF IFRMS Value 10 14.1 31 39 100 4.8 600 600 75 -55... +175 Unit A Surge non repetitive forward current, sine halfwave IFSM Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 IFRM IFMAX ∫i2dt VRRM VRSM Ptot Tj , Tstg Non repetitive peak forward current tp=10µs, TC=25°C i 2t value, TC=25°C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating and storage temperature A²s V W °C Rev. 2.2 Page 1 2008-06-02 SDT10S60 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded RthJC RthJA 2 62 K/W Symbol min. Values typ. max. Unit Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Diode forward voltage IF=10A, Tj=25°C IF=10A, Tj=150°C Symbol min. VF IR - Values typ. max. Unit V 1.5 1.7 34 85 1.7 2.1 µA 350 1500 Reverse current V R=600V, T j=25°C V R=600V, T j=150°C Rev. 2.2 Page 2 2008-06-02 SDT10S60 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. AC Characteristics Total capacitive charge V R=400V, IF=10A, diF /dt=200A/µs, Tj=150°C Unit max. nC ns pF typ. 29 n.a. Qc trr C - Switching time V R=400V, IF=10A, diF /dt=200A/µs, Tj=150°C Total capacitance V R=0V, T C=25°C, f=1MHz V R=300V, T C=25°C, f=1MHz V R=600V, T C=25°C, f=1MHz - 350 33 23 - Rev. 2.2 Page 3 2008-06-02 SDT10S60 1 Power dissipation Ptot = f (TC) 80 SDT10S60 2 Diode forward current IF = f (TC) parameter: Tj≤175 °C 11 W A 9 60 8 Ptot IF 100 120 140 160 °C 190 50 7 6 40 5 30 4 3 2 10 1 20 40 60 80 0 0 20 40 60 80 100 120 140 20 0 0 TC °C 180 TC 3 Typ. forward characteristic IF = f (VF) 4 Typ. forward power dissipation vs. average forward current PF(AV)=f(IF) TC=100°C, d = tp/T 48 parameter: Tj , tp = 350 µs 20 A 16 14 W 150°C 125°C 100°C 25°C -40°C 40 36 d=1 d=0,5 d=0,2 d=0,1 PF(AV) V 2.5 VF 32 28 24 20 16 12 IF 12 10 8 6 4 2 0 0 8 4 0.25 0.5 0.75 1 1.25 1.5 1.75 2 0 0 2 4 6 8 10 12 14 16 A 20 IF(AV) Rev. 2.2 Page 4 2008-06-02 SDT10S60 5 Typ. reverse current vs. reverse voltage I R=f(VR) 10 2 6 Transient thermal impedance ZthJC = f (t p) parameter : D = t p/T 10 1 SDT10S60 µA 10 1 K/W 10 0 10 0 150°C 125°C 100°C 25°C ZthJC 10 -1 IR D = 0.50 10 -1 10 -2 0.20 0.10 0.05 0.02 single pulse 0.01 10 -2 10 -3 10 -3 100 150 200 250 300 350 400 450 500 V 600 VR 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 7 Typ. capacitance vs. reverse voltage C= f(V R) 8 Typ. C stored energy EC=f(V R) 6 parameter: TC = 25 °C, f = 1 MHz 400 pF 320 280 240 200 160 120 80 40 00 10 1 2 3 10 V VR µJ 5 4.5 C EC 4 3.5 3 2.5 2 1.5 1 0.5 10 10 0 0 100 200 300 400 V VR 600 Rev. 2.2 Page 5 2008-06-02 SDT10S60 9 Typ. capacitive charge vs. current slope Q c=f(diF /dt) parameter: Tj = 150 °C 40 nC IF*2 30 IF Qc 25 IF*0.5 20 15 10 5 0 0 100 200 300 400 500 600 700 800A/µs 1000 diF /dt Rev. 2.2 Page 6 2008-06-02 SDT10S60 PG-TO-220-2-2 Rev. 2.2 Page 7 2008-06-02 SDT10S60 Rev. 2.2 Page 8 2008-06-02