SDT12S60_08

SDT12S60 Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • No forward recovery thinQ! SiC Schottky Diode Product Summary VRRM Qc IF 600 30 12 PG-TO220-2-2. V nC A Type SDT12S60 Package PG-TO220-2-2. Ordering Code Q67040-S4470 Marking D12S60 Pin 1 C Pin 2 A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz TC=25°C, tp=10ms Symbol IF IFRMS Value 12 17 36 49 120 6.48 600 600 88.2 -55... +175 Unit A Surge non repetitive forward current, sine halfwave IFSM Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 IFRM IFMAX ∫i2dt VRRM VRSM Ptot Tj , Tstg Non repetitive peak forward current tp=10µs, TC=25°C i 2t value, TC=25°C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating and storage temperature A²s V W °C Rev. 2.3 Page 1 2008-06-03 SDT12S60 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded RthJC RthJA 1.7 62 K/W Symbol min. Values typ. max. Unit Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Diode forward voltage IF=12A, Tj=25°C IF=12A, Tj=150°C Symbol min. VF IR - Values typ. max. Unit V 1.5 1.7 40 100 1.7 2.1 µA 400 2000 Reverse current V R=600V, T j=25°C V R=600V, T j=150°C Rev. 2.3 Page 2 2008-06-03 SDT12S60 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. AC Characteristics Total capacitive charge V R=400V, IF=12A, diF /dt=200A/µs, Tj=150°C Unit max. nC ns pF typ. 30 n.a. Qc trr C - Switching time V R=400V, IF=12A, diF /dt=200A/µs, Tj=150°C Total capacitance V R=1V, T C=25°C, f=1MHz V R=300V, T C=25°C, f=1MHz V R=600V, T C=25°C, f=1MHz - 450 45 43 - Rev. 2.3 Page 3 2008-06-03 SDT12S60 1 Power dissipation Ptot = f (TC) 90 2 Diode forward current IF = f (TC) parameter: Tj≤175 °C 24 W A 20 70 60 18 16 Ptot IF 50 40 30 20 10 0 0 20 40 60 80 100 120 140 14 12 10 8 6 4 2 °C 180 TC 0 0 20 40 60 80 100 120 140 °C TC 180 3 Typ. forward characteristic IF = f (VF) 4 Typ. forward power dissipation vs. average forward current PF(AV)=f(IF) TC=100°C, d = tp/T 44 parameter: Tj , tp = 350 µs 24 W A 150°C 125°C 100°C 25°C -40°C d=0.1 d=0.2 36 d=0.5 d=1 16 PF(AV) 1 1.5 2.5 32 28 24 IF 12 20 8 16 12 4 8 4 0 0 0.5 V VF 0 0 2 4 6 8 10 12 16 A IF(AV) Rev. 2.3 Page 4 2008-06-03 SDT12S60 5 Typ. reverse current vs. reverse voltage I R=f(VR) 10 2 6 Transient thermal impedance ZthJC = f (t p) parameter : D = t p/T 10 1 SDT12S60 µA 150°C 10 1 125°C K/W 100°C 25°C 10 0 10 0 ZthJC IR 10 -1 D = 0.50 10 -1 10 -2 0.20 0.10 0.05 0.02 0.01 10 -2 10 -3 single pulse 10 -3 100 150 200 250 300 350 400 450 500 V VR 600 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 7 Typ. capacitance vs. reverse voltage C= f(V R) 8 Typ. C stored energy EC=f(V R) 9 parameter: TC = 25 °C, f = 1 MHz 600 pF 500 450 µJ 7 6 5 4 3 2 1 0 0 C 350 300 250 200 150 100 50 00 10 10 1 10 2 V VR 10 3 EC 400 100 200 300 400 V VR 600 Rev. 2.3 Page 5 2008-06-03 SDT12S60 9 Typ. capacitive charge vs. current slope Q c=f(diF /dt) parameter: Tj = 150 °C 40 nC 32 28 IF *2 IF Qc IF *0.5 24 20 16 12 8 4 0 100 200 300 400 500 600 700 800A/µs 1000 diF/dt Rev. 2.3 Page 6 2008-06-03 SDT12S60 PG-TO-220-2-2 Rev. 2.3 Page 7 2008-06-03 SDT12S60 Rev. 2.3 Page 8 2008-06-03