SEMH1

SEMH1 NPN Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two ( galvanic) internal isolated Transistors with good matching in one package • Built in bias resistor (R1=22kΩ, R2 =22kΩ) C1 6 B2 5 E2 4 4 5 3 6 1 2 R2 R1 TR1 R2 1 E1 2 B1 3 C2 EHA07174 TR2 R1 Type SEMH1 Maximum Ratings Parameter Marking WD Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj T stg Value 50 50 10 30 100 250 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation , TS = 75 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point 1) mA mW °C RthJS ≤ 300 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Feb-25-2004 SEMH1 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 A Collector-base breakdown voltage IC = 10 µA, IE = 0 A Emitter-base breakdown voltage IE = 10 µA, IC = 0 A Collector cutoff current VCB = 40 V, IE = 0 A Emitter cutoff current VEB = 10 V, IC = 0 A DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Input resistor Resistor ratio R1 R1/R2 15 0.9 22 1 29 1.1 kΩ Vi(on) 1 2.5 Vi(off) 0.8 1.5 VCEsat 0.3 V hFE 50 IEBO 350 µA ICBO 100 nA V(BR)EBO V(BR)CEO V(BR)CBO 50 50 V Symbol min. Values typ. max. Unit AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 3 pF fT 130 MHz 1) Pulse test: t < 300µs; D < 2% 2 Feb-25-2004 SEMH1 DC Current Gain hFE = f (I C) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) 10 3 VCEsat = f (IC), hFE = 20 10 2 mA hFE 10 2 IC 10 1 10 1 10 0 -1 10 0 1 10 10 mA 10 2 10 0 0 0.2 0.4 0.6 V 1 IC VCEsat Input on Voltage Vi(on) = f (IC ) Input off voltage Vi(off) = f (IC ) VCE = 0.3V (common emitter configuration) 10 2 VCE = 5V (common emitter configuration) 10 1 mA mA 10 0 10 1 IC IC 10 -1 10 0 10 -2 10 -1 -1 10 10 0 10 1 V 10 2 10 -3 0 0.5 1 1.5 2 V 3 Vi(on) Vi(off) 3 Feb-25-2004 SEMH1 Total power dissipation P tot = f (TS) 300 mW Ptot 200 150 100 50 0 0 15 30 45 60 75 90 105 120 °C 150 TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 K/W 10 3 10 2 Ptotmax/ PtotDC RthJS 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 4 Feb-25-2004