SFH610A

5.3 kV TRIOS Optocoupler High Reliability FEATURES • Variety of Current Transfer Ratios at IF=10 mA – SFH610A/617A-1, 40–80% – SFH610A/617A-2, 63–125% – SFH610A/617A-3, 100–200% – SFH610A/617A-4, 160–320% • Low CTR Degradation • Good CTR Linearity Depending on Forward Current • Withstand Test Voltage, 5300 VRMS • High Collector-Emitter Voltage, VCEO=70 V • Low Saturation Voltage • Fast Switching Times • Field-Effect Stable by TRIOS (TRansparent IOn Shield) • Temperature Stable • Low Coupling Capacitance • End-Stackable, .100" (2.54 mm) Spacing • High Common-Mode Interference Immunity (Unconnected Base) • Underwriters Lab File #52744 • V VDE 0884 Available with Option 1 DE SFH610A/617A Dimensions in Inches (mm) 2 1 pin one ID SFH610A .255 (6.48) .268 (6.81) Anode 1 Cathode 2 4 Emitter 3 Collector 3 4 .179 (4.55) .190 (4.83) .030 (.76) .045 (1.14) .031 (.79) typ. .050 (1.27) typ. .130 (3.30) .150 (3.81) 4° typ. .018 (.46) .022 (.56) 10 ° .020 (.508 ) .035 (.89) .050 (1.27) .100 (2.54) 3°–9° .008 (.20) .012 (.30) .300 (7.62) typ. .230 (5.84) .250 (6.35) .110 (2.79) .130 (3.30) SFH617A Anode 1 4 Collector 3 Emitter DESCRIPTION The SFH61XA features a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package. The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm spacing. Creepage and clearance distances of >8.0 mm are achieved with option 6. This version complies with IEC 950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 VRMS or DC. Specifications subject to change. Cathode 2 Maximum Ratings Emitter Reverse Voltage.........................................................................6.0 V DC Forward Current.................................................................60 mA Surge Forward Current (tP≤10 µs) .............................................2.5 A Total Power Dissipation.........................................................100 mW Detector Collector-Emitter Voltage ............................................................70 V Emitter-Collector Voltage ...........................................................7.0 V Collector Current .....................................................................50 mA Collector Current (tP≤1.0 ms).................................................100 mA Total Power Dissipation.........................................................150 mW Package Isolation Test Voltage between Emitter and Detector, refer to Climate DIN 40046, part 2, Nov. 74 ................. 5300 VRMS Creepage............................................................................ ≥7.0 mm Clearance ........................................................................... ≥7.0 mm Insulation Thickness between Emitter and Detector .......... ≥0.4 mm Comparative Tracking Index per DIN IEC 112/VDE0 303, part 1 ....................................... ≥175 Isolation Resistance VIO=500 V, TA=25°C ......................................................... ≥1012 Ω VIO=500 V, TA=100°C ....................................................... ≥1011 Ω Storage Temperature Range ......................................–55 to +150°C Ambient Temperature Range......................................–55 to +100°C Junction Temperature .............................................................. 100°C Soldering Temperature (max. 10 s. Dip Soldering Distance to Seating Plane ≥1.5 mm).................................... 260°C  2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) 2–228 March 27, 2000-00 Characteristics (TA=25°C) Description Emitter (IR GaAs) Forward Voltage Reverse Current Capacitance Thermal Resistance Detector (Si Phototransistor) Capacitance Thermal Resistance Package Collector-Emitter Saturation Voltage Coupling Capacitance VCEsat CC 0.25 (≤0.4) 0.4 V pF IF=10 mA, IC=2.5 mA CCE RthJA 5.2 500 pF K/W VCE=5 V, f=1.0 MHz VF IR C0 RthJA 1.25 (≤1.65) 0.01 (≤10) 13 750 V µA Symbol Unit Condition IF=60 mA VR=6.0 V VR=0 V, f=1.0 MHz pF K/W Current Transfer Ratio (IC/IF at VCE=5.0 V) and Collector-Emitter Leakage Current by Dash Number Description IC/IF (IF=10 mA) IC/IF (IF=1.0 mA) Collector-Emitter Leakage Current, ICEO VCE=10 V -1 40–80 30 (>13) 2.0 (≤50) -2 63–125 45 (>22) 2.0 (≤50) -3 100–200 70 (>34) 5.0 (≤100) -4 160–320 90 (>56) 5.0 (≤100) nA % Figure 1. Switching Times (Typical) Linear Operation (without saturation) RL=75 Ω IC VCC=5 V IF=10 mA, VCC=5.0 V, TA=25°C Load Resistance Turn-on Time Rise Time Turn-off Time RL tON tR tOFF tF FCO 75 3.0 2.0 2.3 2.0 250 kHz Ω µs IF 47 Ω Fall Time Cut-off Frequency Figure 2. Switching Operation (with saturation) Dash No. Parameter IF 1.0 k Ω VCC=5.0 V Sym. -1 IF=20 mA -2 and -3 IF=10 mA -4 IF=5.0 mA Unit Turn-on Time Rise Time tON tR tOFF tF 3.0 2.0 18 11 4.2 3.0 23 14 6.0 4.6 25 15 µs 47 Ω Turn-off Time Fall Time  2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) 2–229 SFH610/17A March 27, 2000-00 Figure 3. Current Transfer Ratio (typ.) vs. Temperature IF=10 mA, VCC=5.0 V Figure 6. Transistor capacitance (typ.) vs. collector-emitter voltage TA=25°C, f=1.0 MHz 20 pF 15 Figure 9. Permissible Diode Forward Current vs. Ambient Temperature C 10 5 CCE 0 10-2 10-1 10-0 101 V Ve 102 Figure 4. Output Characteristics (typ.) Collector Current vs. Collector-emitter Voltage TA=25°C Figure 7. Permissible Pulse Handling Capability. Forward Current vs. Pulse Width Pulse cycle D=parameter, TA=25°C Figure 5. Diode Forward Voltage (typ.) vs. Forward Current Figure 8. Permissible Power Dissipation vs. Ambient Temperature  2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA www.infineon.com/opto • 1-888-Infineon (1-888-463-4636) 2–230 SFH610/17A March 27, 2000-00