SGB06N60

SGB06N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ 2 C G E PG-TO-263-3-2 (D²-PAK) (TO-263AB) Type SGB06N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C VCE 600V IC 6A VCE(sat)150°C 2.3V Tj 150°C Marking G06N60 Package PG-TO-263-3-2 Symbol VCE IC Value 600 12 6.9 Unit V A Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 6 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature (reflow soldering, MSL1) 1) ICpul s VGE EAS 24 24 ±20 34 V mJ tSC Ptot Tj , Tstg 10 68 -55...+150 245 µs W °C VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C 2 1) J-STD-020 and JESD-022 Allowed number of short circuits: 1s. 1 Rev. 2.2 Nov 06 SGB06N60 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient 1) Symbol RthJC RthJA Conditions Max. Value 1.85 40 Unit K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µ A VCE(sat) VGE = 15V, IC=6A T j =2 5 ° C T j =1 5 0 ° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 25 0 µ A , V C E = V G E V C E = 60 0 V, V G E = 0 V T j =2 5 ° C T j =1 5 0 ° C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 2) Symbol Conditions Value min. 600 1.7 3 Typ. 2.0 2.3 4 4.2 350 38 23 32 7 60 max. 2.4 2.8 5 Unit V µA 20 700 100 420 46 28 42 nC nH A nA S pF IGES gfs Ciss Coss Crss QGate LE IC(SC) V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 6 A V C E = 25 V , V G E = 0V , f = 1 MH z V C C = 48 0 V, I C =6 A V G E = 15 V V G E = 15 V , t S C ≤ 10 µ s V C C ≤ 6 0 0 V, Tj ≤ 150°C - Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: 1s. 2 Rev. 2.2 Nov 06 1) 2 SGB06N60 Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =2 5 ° C , V C C = 40 0 V, I C = 6 A, V G E = 0/ 15 V , R G =50Ω , 1) L σ = 18 0 nH , 1) C σ = 25 0 pF Energy losses include “tail” and diode reverse recovery. 25 18 220 54 0.110 0.105 0.215 30 22 264 65 0.127 0.137 0.263 mJ ns Symbol Conditions Value min. typ. max. Unit Switching Characteristic, Inductive Load, at Tj=150 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 ° C V C C = 40 0 V, I C =6 A , V G E = 0/ 15 V , R G = 50 Ω , 1) L σ = 18 0 nH , 1) C σ = 25 0 pF Energy losses include “tail” and diode reverse recovery. 24 17 248 70 0.167 0.153 0.320 29 20 298 84 0.192 0.199 0.391 mJ ns Symbol Conditions Value min. typ. max. Unit 1) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E. 3 Rev. 2.2 Nov 06 SGB06N60 30A Ic t p =2 µ s IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 10A 15 µ s 20A T C =80°C 50 µ s 1A 200 µ s 1ms DC 10A T C =110°C Ic 0A 1 0Hz 0.1A 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 50Ω) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C) 15A 80W 60W IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 10A 40W 5A 20W 0W 2 5°C 50°C 75°C 100°C 125°C 0A 2 5°C 50°C 75°C 100°C 125°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≤ 15V, Tj ≤ 150°C) 4 Rev. 2.2 Nov 06 SGB06N60 20A 20A 15A 15A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT VGE=20V 10A 15V 13V 11V 9V 7V 5V VGE=20V 10A 15V 13V 11V 9V 7V 5V 5A 5A 0A 0V 1V 2V 3V 4V 5V 0A 0V 1V 2V 3V 4V 5V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25°C) VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150°C) 18A 16A Tj=+25°C -55°C +150°C VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE 20A 4.0V 3.5V IC = 12A IC, COLLECTOR CURRENT 14A 12A 10A 8A 6A 4A 2A 0A 0V 2V 4V 6V 3.0V 2.5V IC = 6A 2.0V 1.5V 8V 10V 1.0V -50°C 0°C 50°C 100°C 150°C VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 10V) Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.2 Nov 06 SGB06N60 t d(off) td(off) t, SWITCHING TIMES tf t, SWITCHING TIMES 100ns tf 100ns t d(on) t d(on) tr 10ns 0A 3A 6A 9A 12A 15A 10ns 0Ω 50 Ω 100 Ω tr 150 Ω IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, RG = 50Ω, Dynamic test circuit in Figure E) RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, IC = 6A, Dynamic test circuit in Figure E) 5.5V t d(off) 100ns tf VGE(th), GATE-EMITTER THRESHOLD VOLTAGE 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V - 50°C 0°C 50°C 100°C 150°C typ. max. t, SWITCHING TIMES td(on) tr 10ns 0 °C 50°C 100°C 150°C min. Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 6A, RG = 50Ω, Dynamic test circuit in Figure E) Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.25mA) 6 Rev. 2.2 Nov 06 SGB06N60 0.8mJ *) Eon and Ets include losses due to diode recovery. 0.6mJ *) Eon and Ets include losses due to diode recovery. E ts * E ts * E, SWITCHING ENERGY LOSSES 0.6mJ E, SWITCHING ENERGY LOSSES 0.4mJ 0.4mJ E on * E off 0.2mJ E off 0.2mJ E on * 0.0mJ 0A 3A 6A 9A 12A 15A 0.0mJ 0Ω 50 Ω 100 Ω 150 Ω IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, RG = 50Ω, Dynamic test circuit in Figure E) RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, IC = 6A, Dynamic test circuit in Figure E) 0.4mJ *) Eon and Ets include losses due to diode recovery. ZthJC, TRANSIENT THERMAL IMPEDANCE E ts * 10 K/W 0.2 0.1 10 K/W 0.02 R,(K/W) 0.705 0.561 0.583 R1 -1 0 D =0.5 E, SWITCHING ENERGY LOSSES 0.3mJ 0.05 0.2mJ E on * E off 0.1mJ 10 K/W -2 0.01 τ, (s) 0.0341 3.74E-3 3.25E-4 R2 single pulse 10 K/W 1 µs -3 0.0mJ 0 °C C1 =τ1/ R1 C2 =τ 2/ R2 50°C 100°C 150°C 10µs 100µs 1m s 10m s 100m s 1s Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 6A, RG = 50Ω, Dynamic test circuit in Figure E) tp, PULSE WIDTH Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T) 7 Rev. 2.2 Nov 06 SGB06N60 25V 1nF 20V C iss VGE, GATE-EMITTER VOLTAGE 120V 15V 480V C, CAPACITANCE 100pF 10V C oss 5V C rss 0V 0 nC 15nC 30nC 45nC 10pF 0V 10V 20V 30V QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 6A) VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz) 25 µ s 100A 20 µ s IC(sc), SHORT CIRCUIT COLLECTOR CURRENT 11V 12V 13V 14V 15V tsc, SHORT CIRCUIT WITHSTAND TIME 80A 15 µ s 60A 10 µ s 40A 5µ s 20A 0µ s 1 0V 0A 1 0V 12V 14V 16V 18V 20V VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 600V, start at Tj = 25°C) VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (VCE ≤ 600V, Tj = 150°C) 8 Rev. 2.2 Nov 06 SGB06N60 PG-TO263-3-2 9 Rev. 2.2 Nov 06 SGB06N60 τ1 Tj (t) p(t) r1 r2 τ2 τn rn r1 r2 rn TC Figure D. Thermal equivalent circuit Figure A. Definition of switching times Figure B. Definition of switching losses Figure E. Dynamic test circuit Leakage inductance Lσ =180nH a n d Stray capacity C σ =250pF. 10 Rev. 2.2 Nov 06 SGB06N60 Edition 2006-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 11/30/06. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 Rev. 2.2 Nov 06