SGB07N120_07

SGB07N120 Fast IGBT in NPT-technology • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGB07N120 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 8A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature (reflow soldering, MSL1) Tj , Tstg Ts -55...+150 245 °C 2 1 C G E PG-TO-263-3-2 (D²-PAK) VCE 1200V IC 8A Eoff 0.7mJ Tj 150°C Marking Package GB07N120 PG-TO-263-3-2 Symbol VCE IC Value 1200 16.5 7.9 Unit V A ICpul s VGE EAS tSC Ptot 27 27 ±20 40 10 125 V mJ µs W VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°C 1 2 J-STD-020 and JESD-022 Allowed number of short circuits: 1s. 1 Rev. 2_2 Apr 07 Power Semiconductors SGB07N120 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient 1) Symbol RthJC RthJA Conditions Max. Value 1 40 Unit K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µ A VCE(sat) VGE = 15V, IC=8A T j =2 5 ° C T j =1 5 0 ° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 35 0 µ A , V C E = V G E V C E =1200V,V G E =0V T j =2 5 ° C T j =1 5 0 ° C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 2) Symbol Conditions Value min. 1200 2.5 3 typ. 3.1 3.7 4 6 720 60 40 70 7 75 max. 3.6 4.3 5 Unit V µA 100 400 100 870 75 50 90 nC nH A nA S pF IGES gfs Ciss Coss Crss QGate LE IC(SC) V C E =0V, V G E =20V V C E = 20 V , I C = 8 A V C E = 25 V , V G E = 0V , f = 1 MH z V C C = 96 0 V, I C =8 A V G E = 15 V V G E = 15 V , t S C ≤ 10 µ s 10 0 V ≤ V C C ≤ 12 0 0 V, Tj ≤ 150°C - Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: 1s. 1) 2 Power Semiconductors 2 Rev. 2_2 Apr 07 SGB07N120 Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =2 5 ° C , V C C = 80 0 V, I C = 8 A, V G E = 15 V /0 V , R G = 47 Ω , 1) L σ =1 8 0n H, 1) C σ = 4 0p F Energy losses include “tail” and diode reverse recovery. 27 29 440 21 0.6 0.4 1.0 35 38 570 27 0.8 0.55 1.35 mJ ns Symbol Conditions Value min. typ. max. Unit Switching Characteristic, Inductive Load, at Tj=150 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 ° C V C C = 80 0 V, I C = 8 A, V G E = 15 V /0 V , R G = 47 Ω , 1) L σ =1 8 0n H, 1) C σ = 4 0p F Energy losses include “tail” and diode reverse recovery. 30 26 490 30 1.0 0.7 1.7 36 31 590 36 1.2 0.9 2.1 mJ ns Symbol Conditions Value min. typ. max. Unit 1) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E. Power Semiconductors 3 Rev. 2_2 Apr 07 SGB07N120 35A 30A 10A Ic tp=5µs 15µs IC, COLLECTOR CURRENT 20A 15A TC=80°C IC, COLLECTOR CURRENT 25A 50µs 200µs 1A 1ms TC=110°C 10A 5A 0A 10Hz Ic 0.1A DC 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 800V, VGE = +15V/0V, RG = 47Ω) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C) 150W 20A 125W 100W 75W IC, COLLECTOR CURRENT 50°C 75°C 100°C 125°C Ptot, POWER DISSIPATION 15A 10A 50W 5A 25W 0W 2 5°C 0A 25°C 50°C 75°C 100°C 125°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≤ 15V, Tj ≤ 150°C) Power Semiconductors 4 Rev. 2_2 Apr 07 SGB07N120 25A 25A 20A 20A VGE=17V IC, COLLECTOR CURRENT 15A 10A 15V 13V 11V 9V 7V IC, COLLECTOR CURRENT 15A 10A VGE=17V 15V 13V 11V 9V 7V 5A 5A 0A 0V 1V 2V 3V 4V 5V 6V 7V 0A 0V 1V 2V 3V 4V 5V 6V 7V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25°C) VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150°C) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE 25A 6V IC=16A 5V 20A IC, COLLECTOR CURRENT 4V 15A TJ=+150°C TJ=+25°C 10A TJ=-40°C IC=8A IC=4A 3V 2V 5A 1V 0A 3V 5V 7V 9V 11V 0V -50°C 0°C 50°C 100°C 150°C VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 20V) Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) Power Semiconductors 5 Rev. 2_2 Apr 07 SGB07N120 000ns td(off) td(off) t, SWITCHING TIMES tf 100ns t, SWITCHING TIMES 100ns td(on) tr 10ns 0A 5A 10A 15A 20A tf td(on) tr 10ns 0Ω 20Ω 40Ω 60Ω 80Ω 100Ω IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, RG = 4 7 Ω, dynamic test circuit in Fig.E ) RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, IC = 8A, dynamic test circuit in Fig.E ) 6V td(off) VGE(th), GATE-EMITTER THRESHOLD VOLTAGE 5V max. t, SWITCHING TIMES 4V 100ns 3V typ. 2V min. td(on) tf 10ns -50°C 0°C 50°C 100°C tr 1V 150°C 0V -50°C 0°C 50°C 100°C 150°C Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 8A, RG = 4 7 Ω, dynamic test circuit in Fig.E ) Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA) Power Semiconductors 6 Rev. 2_2 Apr 07 SGB07N120 2.5mJ 5mJ *) Eon and Ets include losses due to diode recovery. Ets* 2.0mJ *) Eon and Ets include losses due to diode recovery. Ets* E, SWITCHING ENERGY LOSSES 4mJ Eon* E, SWITCHING ENERGY LOSSES 1.5mJ Eon* 1.0mJ Eoff 3mJ 2mJ Eoff 1mJ 0.5mJ 0mJ 0A 5A 10A 15A 20A 0.0mJ 0Ω 20Ω 40Ω 60Ω 80Ω 100Ω IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, RG = 4 7 Ω, dynamic test circuit in Fig.E ) RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, IC = 8A, dynamic test circuit in Fig.E ) 2.0mJ *) Eon and Ets include losses due to diode recovery. Ets* 10 K/W 0 1.5mJ ZthJC, TRANSIENT THERMAL IMPEDANCE D=0.5 0.2 10 K/W -1 E, SWITCHING ENERGY LOSSES 0.1 0.05 0.02 R,(K/W) 0.1020 0.40493 0.26391 0.22904 R1 1.0mJ Eon* Eoff 0.5mJ 10 K/W -2 0.01 τ, (s) 0.77957 0.21098 0.01247 0.00092 R2 0.0mJ -50°C single pulse 0°C 50°C 100°C 150°C 10 K/W 1µs -3 C1 =τ1/ R1 C2 =τ 2/ R2 10µs 100µs 1ms 10ms 100ms 1s Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 8A, RG = 4 7 Ω, dynamic test circuit in Fig.E ) tp, PULSE WIDTH Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T) Power Semiconductors 7 Rev. 2_2 Apr 07 SGB07N120 20V 1nF VGE, GATE-EMITTER VOLTAGE 15V Ciss 10V UCE=960V C, CAPACITANCE 5V 100pF Coss 0V Crss 0nC 20nC 40nC 60nC 80nC QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 8A) VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz) 0V 10V 20V 30V 30µs 150A tsc, SHORT CIRCUIT WITHSTAND TIME 25µs 20µs IC(sc), SHORT CIRCUIT COLLECTOR CURRENT 11V 12V 13V 14V 15V 100A 15µs 10µs 50A 5µs 0µs 10V 0A 10V 12V 14V 16V 18V 20V VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 1200V, start at Tj = 25°C) VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (100V ≤ VCE ≤ 1200V, TC = 25°C, Tj ≤ 150°C) Power Semiconductors 8 Rev. 2_2 Apr 07 SGB07N120 PG-TO263-3-2 Power Semiconductors 9 Rev. 2_2 Apr 07 SGB07N120 i,v diF /dt tr r =tS +tF Qr r =QS +QF IF tS QS tr r tF 10% Ir r m t VR Ir r m QF dir r /dt 90% Ir r m Figure C. Definition of diodes switching characteristics τ1 Tj (t) p(t) r1 r2 τ2 τn rn r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Figure E. Dynamic test circuit Leakage inductance Lσ =180nH, and stray capacity Cσ =40pF. Power Semiconductors 10 Rev. 2_2 Apr 07 SGB07N120 Edition 2006-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 4/27/07. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 11 Rev. 2_2 Apr 07