SGB10N60A

SGB10N60A Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGB10N60A Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 10 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature (reflow soldering MSL1) Tj , Tstg -55...+150 245 °C 2 1 C G E PG-TO-263-3-2 VCE 600V IC 10A VCE(sat) 2.3V Tj 150°C Marking G10N60A Package PG-TO-263-3-2 Symbol VCE IC Value 600 20 10.6 Unit V A ICpul s VGE EAS 40 40 ±20 70 V mJ tSC Ptot 10 92 µs W VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C 1 2 J-STD-020 and JESD-022 Allowed number of short circuits: 1s. 1 Rev. 2.3 July 07 SGB10N60A Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient 1) Symbol RthJC RthJA Conditions Max. Value 1.35 40 Unit K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µ A VCE(sat) V G E = 1 5 V , I C = 10 A T j =2 5 ° C T j =1 5 0 ° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 30 0 µ A , V C E = V G E V C E = 60 0 V, V G E = 0 V T j =2 5 ° C T j =1 5 0 ° C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 2) Symbol Conditions Value min. 600 1.7 3 Typ. 2 2.3 4 6.7 550 62 42 52 7 100 max. 2.4 2.8 5 Unit V µA 40 1500 100 660 75 51 68 nC nH A nA S pF IGES gfs Ciss Coss Crss QGate LE IC(SC) V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 10 A V C E = 25 V , V G E = 0V , f = 1 MH z V C C = 48 0 V, I C =1 0 A V G E = 15 V V G E = 15 V , t S C ≤ 10 µ s V C C ≤ 6 0 0 V, Tj ≤ 150°C - 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: 1s. 2 Rev. 2.3 July 07 2 SGB10N60A Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =2 5 ° C , V C C = 40 0 V, I C = 1 0 A, V G E = 0/ 15 V , R G = 25 Ω , 1) L σ = 18 0 nH , 1) C σ = 55 pF Energy losses include “tail” and diode reverse recovery. 28 12 178 24 0.15 0.17 0.320 34 15 214 29 0.173 0.221 0.394 mJ ns Symbol Conditions Value min. typ. max. Unit Switching Characteristic, Inductive Load, at Tj=150 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 ° C V C C = 40 0 V, I C = 1 0 A, V G E = 0/ 15 V , R G = 25 Ω 1) L σ = 18 0 nH , 1) C σ = 55 pF Energy losses include “tail” and diode reverse recovery. 28 12 198 26 0.260 0.280 0.540 34 15 238 32 0.299 0.364 0.663 mJ ns Symbol Conditions Value min. typ. max. Unit 1) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E. 3 Rev. 2.3 July 07 SGB10N60A 50A T C =80°c IC, COLLECTOR CURRENT Ic t p =5 µs IC, COLLECTOR CURRENT 40A 30A 20A 10A T C =110°c 10A 15 µs 50 µs 1A 2 00 µs 1ms DC 1V 10V 100V 1000V Ic 0,1A 0A 1 0Hz 100Hz 1kHz 10kHz 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 25Ω) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C) 120 W 25A 100 W 20A Ptot, POWER DISSIPATION 80 W IC, COLLECTOR CURRENT 15A 60 W 10A 40 W 20 W 5A 0W 2 5 °C 50 °C 75 °C 10 0°C 12 5°C 0A 25°C 50°C 75°C 1 0 0 °C 1 2 5 °C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≤ 15V, Tj ≤ 150°C) 4 Rev. 2.3 July 07 SGB10N60A 35A 30A 35A 30A IC, COLLECTOR CURRENT 25A V G E= 2 0 V 20A 15A 10A 5A 0A 0V 15V 13V 11V 9V 7V 5V IC, COLLECTOR CURRENT 25A V G E= 2 0 V 20A 15A 10A 5A 0A 0V 15V 13V 11V 9V 7V 5V 1V 2V 3V 4V 5V 1V 2V 3V 4V 5V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25°C) VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150°C) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE 35A 30A 3,5V T j=+25°C +150°C I C =20A 3,0V IC, COLLECTOR CURRENT 25A 20A 15A 10A 5A 0A 0V 2,5V I C =10A 2,0V I C =5A 2V 4V 6V 8V 10V 1,5V 0 °C 50°C 100°C 150°C VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 10V) Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.3 July 07 SGB10N60A t d(off) t, SWITCHING TIMES 100ns t, SWITCHING TIMES 1 00 n s t d(o ff) tf t d(on) tr 10ns 0A tf t d(o n ) 10 n s 0Ω tr 20Ω 40 Ω 60 Ω 80Ω 5A 10A 15A 20A 25A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, RG = 2 5 Ω, Dynamic test circuit in Figure E) RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, IC = 10A, Dynamic test circuit in Figure E) 5 ,5 V VGE(th), GATE-EMITTER THRESHOLD VOLTAGE 5 ,0 V 4 ,5 V 4 ,0 V 3 ,5 V 3 ,0 V 2 ,5 V 2 ,0 V 1 ,5 V 1 ,0 V -5 0 ° C 0°C 5 0 °C 1 0 0 °C 1 5 0°C m in . ty p . m ax. t d (o ff) t, SWITCHING TIMES 100ns t d(o n) tf tr 50°C 100°C 150°C 10ns 0 °C Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 10A, RG = 2 5 Ω, Dynamic test circuit in Figure E) Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA) 6 Rev. 2.3 July 07 SGB10N60A 1,6m J 1,4m J 1,0m J *) Eon and Ets include losses due to diode recovery. *) Eon and Ets include losses due to diode recovery. E ts * E, SWITCHING ENERGY LOSSES 1,2m J 1,0m J 0,8m J 0,6m J 0,4m J 0,2m J 0,0m J 0A E, SWITCHING ENERGY LOSSES E ts * 0,8m J E on * E off 0,6m J E off 0,4m J E on * 5A 10A 15A 20A 25A 0,2m J 0Ω 20 Ω 40 Ω 60 Ω 80 Ω IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, RG = 2 5 Ω, Dynamic test circuit in Figure E) RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, IC = 10A, Dynamic test circuit in Figure E) 0,8mJ ZthJC, TRANSIENT THERMAL IMPEDANCE *) Eon and Ets include losses due to diode recovery. 10 K/W D =0.5 0.2 10 K/W -1 0 E, SWITCHING ENERGY LOSSES 0,6mJ 0.1 0.05 0.02 0,4mJ E ts* 0,2mJ R,(K/W) 0.4287 0.4830 0.4383 R1 τ, (s) 0.0358 4.3*10-3 3.46*10-4 R2 10 K/W -2 0.01 E off E on* single pulse 10 K/W 1 µs -3 C1 =τ1/ R1 C2 =τ 2/ R2 0,0mJ 0 °C 50°C 100°C 150°C 10µs 100µs 1m s 10m s 100m s 1s Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 10A, RG = 2 5 Ω, Dynamic test circuit in Figure E) tp, PULSE WIDTH Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T) 7 Rev. 2.3 July 07 SGB10N60A 25V 1nF C iss VGE, GATE-EMITTER VOLTAGE 20V 15V 120V 480V C, CAPACITANCE 100pF C oss C rss 10V 5V 0V 0nC 25nC 50nC 75nC 10pF 0V 10V 20V 30V QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 10A) VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz) 25µ s 200A 20µ s IC(sc), SHORT CIRCUIT COLLECTOR CURRENT tsc, SHORT CIRCUIT WITHSTAND TIME 150A 15µ s 100A 10µ s 50A 5µ s 0µ s 10V 11V 12V 13V 14V 15V 0A 10V 12V 14V 16V 18V 20V VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 600V, start at Tj = 25°C) VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (VCE ≤ 600V, Tj = 150°C) 8 Rev. 2.3 July 07 SGB10N60A PG-TO263-3-2 9 Rev. 2.3 July 07 SGB10N60A τ1 Tj (t) p(t) PG-TO247-3-1 r1 r2 τ2 τn rn r1 r2 rn TC Figure D. Thermal equivalent circuit Figure A. Definition of switching times Figure B. Definition of switching losses Figure E. Dynamic test circuit Leakage inductance Lσ =180nH a n d Stray capacity C σ =55pF. 10 Rev. 2.3 July 07 SGB10N60A Edition 2006-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 7/11/07. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 Rev. 2.3 July 07