SGB20N60

SGB20N60 Fast IGBT in NPT-technology • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability 1 C G E PG-TO-263-3-2 (D²-PAK) (TO-263AB) • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGB20N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 20 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature (reflow soldering, MSL1) Tj , Tstg -55...+150 245 °C 2 VCE 600V IC 20A VCE(sat) 2.4V Tj 150°C Marking G20N60 Package PG-TO-263-3-2 Symbol VCE IC Value 600 40 20 Unit V A ICpul s VGE EAS 80 80 ±20 115 V mJ tSC Ptot 10 179 µs W VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C 1 2 J-STD-020 and JESD-022 Allowed number of short circuits: 1s. 1 Rev. 2.2 Nov 06 SGB20N60 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient 1) Symbol RthJC RthJA Conditions Max. Value 0.7 40 Unit K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µ A VCE(sat) V G E = 1 5 V , I C = 20 A T j =2 5 ° C T j =1 5 0 ° C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 70 0 µ A , V C E = V G E V C E = 60 0 V, V G E = 0 V T j =2 5 ° C T j =1 5 0 ° C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 2) Symbol Conditions Value min. 600 1.7 3 Typ. 2 2.4 4 14 1100 107 63 100 7 200 max. 2.4 2.9 5 Unit V µA 40 2500 100 1320 128 76 130 nC nH A nA S pF IGES gfs Ciss Coss Crss QGate LE IC(SC) V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 20 A V C E = 25 V , V G E = 0V , f = 1 MH z V C C = 48 0 V, I C =2 0 A V G E = 15 V V G E = 15 V , t S C ≤ 10 µ s V C C ≤ 6 0 0 V, Tj ≤ 150°C - Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: 1s. 2 Rev. 2.2 Nov 06 1) 2 SGB20N60 Switching Characteristic, Inductive Load, at Tj=25 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =2 5 ° C , V C C = 40 0 V, I C = 2 0 A, V G E = 0/ 15 V , R G = 16 Ω , 1) L σ = 18 0 nH , 1) C σ = 90 0 pF Energy losses include “tail” and diode reverse recovery. 36 30 225 54 0.44 0.33 0.77 46 36 270 65 0.53 0.43 0.96 mJ ns Symbol Conditions Value min. typ. max. Unit Switching Characteristic, Inductive Load, at Tj=150 °C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 ° C V C C = 40 0 V, I C = 2 0 A, V G E = 0/ 15 V , R G = 16 Ω , 1) L σ = 18 0 nH , 1) C σ = 90 0 pF Energy losses include “tail” and diode reverse recovery. 36 30 250 63 0.67 0.49 1.12 46 36 300 76 0.81 0.64 1.45 mJ ns Symbol Conditions Value min. typ. max. Unit 1) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E. 3 Rev. 2.2 Nov 06 SGB20N60 110A 100A 90A 100A Ic tp=4µs 15µs IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 80A 70A 60A 50A 40A 30A 20A 10A 0A 10Hz TC=110°C TC=80°C 10A 50µs 200µs 1A 1ms Ic 0.1A 1V 10V 100V DC 100Hz 1kHz 10kHz 100kHz 1000V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 16Ω) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C) 200W 180W 160W 50A 40A 120W 100W 80W 60W 40W 20W 0W 25°C 50°C 75°C 100°C 125°C IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 140W 30A 20A 10A 0A 25°C 50°C 75°C 100°C 125°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≤ 15V, Tj ≤ 150°C) 4 Rev. 2.2 Nov 06 SGB20N60 60A 60A 50A 50A VGE=20V 15V 13V 11V 9V 7V 5V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 40A 40A VGE=20V 15V 13V 11V 9V 7V 5V 30A 30A 20A 20A 10A 10A 0A 0V 1V 2V 3V 4V 5V 0A 0V 1V 2V 3V 4V 5V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25°C) VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150°C) 60A 50A 40A 30A 20A 10A 0A 0V Tj=+25°C -55°C +150°C VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE 70A 4.0V 3.5V IC = 40A IC, COLLECTOR CURRENT 3.0V 2.5V IC = 20A 2.0V 1.5V 2V 4V 6V 8V 10V 1.0V -50°C 0°C 50°C 100°C 150°C VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 10V) Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.2 Nov 06 SGB20N60 td(off) td(off) t, SWITCHING TIMES 100ns tf t, SWITCHING TIMES 100ns tf td(on) tr td(on) tr 10ns 10A 20A 30A 40A 10ns 0Ω 10Ω 20Ω 30Ω 40Ω 50Ω 60Ω IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, RG = 1 6 Ω, Dynamic test circuit in Figure E) RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, IC = 20A, Dynamic test circuit in Figure E) VGE(th), GATE-EMITTER THRESHOLD VOLTAGE 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V -50°C 0°C 50°C 100°C 150°C typ. max. td(off) t, SWITCHING TIMES 100ns tf tr td(on) min. 10ns 0°C 50°C 100°C 150°C Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 20A, RG = 1 6 Ω, Dynamic test circuit in Figure E) Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.7mA) 6 Rev. 2.2 Nov 06 SGB20N60 3.0mJ *) Eon and Ets include losses due to diode recovery. 3.0mJ Ets* *) Eon and Ets include losses due to diode recovery. 2.5mJ 2.5mJ E, SWITCHING ENERGY LOSSES 2.0mJ Eon* 1.5mJ Eoff E, SWITCHING ENERGY LOSSES 2.0mJ Ets* 1.5mJ 1.0mJ 1.0mJ Eon* Eoff 0.5mJ 0.5mJ 0.0mJ 0A 10A 20A 30A 40A 50A 0.0mJ 0Ω 10Ω 20Ω 30Ω 40Ω 50Ω 60Ω IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, RG = 1 6 Ω, Dynamic test circuit in Figure E) RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150°C, VCE = 400V, VGE = 0/+15V, IC = 20A, Dynamic test circuit in Figure E) 1.6mJ ZthJC, TRANSIENT THERMAL IMPEDANCE 1.4mJ *) Eon and Ets include losses due to diode recovery. 10 K/W D=0.5 0.2 10 K/W 0.1 0.05 0.02 10 K/W 0.01 -2 -1 0 E, SWITCHING ENERGY LOSSES 1.2mJ 1.0mJ 0.8mJ 0.6mJ 0.4mJ 0.2mJ 0.0mJ 0°C Ets* Eon* Eoff R,(1/W) 0.1882 0.3214 0.1512 0.0392 R1 τ, (s) 0.1137 2.24*10-2 7.86*10-4 9.41*10-5 R2 10 K/W single pulse -3 C 1= τ1/R 1 C 2= τ2/R 2 50°C 100°C 150°C 10 K/W 1µs -4 10µs 100µs 1ms 10ms 100ms 1s Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 20A, RG = 1 6 Ω, Dynamic test circuit in Figure E) tp, PULSE WIDTH Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T) 7 Rev. 2.2 Nov 06 SGB20N60 25V Ciss 20V 1nF VGE, GATE-EMITTER VOLTAGE 15V 120V 480V C, CAPACITANCE 10V 100pF Coss 5V Crss 0V 0nC 25nC 50nC 75nC 100nC 125nC 10pF 0V 10V 20V 30V QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 20A) VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz) 25 µ s 350A IC(sc), SHORT CIRCUIT COLLECTOR CURRENT 300A 250A 200A 150A 100A 50A 0A 10V tsc, SHORT CIRCUIT WITHSTAND TIME 20 µ s 15 µ s 10 µ s 5µ s 0µ s 1 0V 11V 12V 13V 14V 15V 12V 14V 16V 18V 20V VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 600V, start at Tj = 25°C) VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (VCE ≤ 600V, Tj = 150°C) 8 Rev. 2.2 Nov 06 SGB20N60 PG-TO263-3-2 9 Rev. 2.2 Nov 06 SGB20N60 τ1 Tj (t) p(t) r1 r2 τ2 τn rn r1 r2 rn TC Figure D. Thermal equivalent circuit Figure A. Definition of switching times Figure B. Definition of switching losses Figure E. Dynamic test circuit Leakage inductance Lσ =180nH a n d Stray capacity C σ =900pF. 10 Rev. 2.2 Nov 06 SGB20N60 Edition 2006-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 11/30/06. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 Rev. 2.2 Nov 06