SGP20N60HS

厂商：
INFINEON
封装：
描述：
SGP20N60HS - High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation - Infi...

数据手册：

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数据手册
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SGP20N60HS 数据手册

SGP20N60HS SGW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • • • • G E PG-TO-220-3-1 PG-TO-247-3 High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant Qualified according to JEDEC1 for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V 600V IC 20 20 Eoff 240µJ 240µJ Tj 150°C 150°C Marking G20N60HS G20N60HS Package PG-TO-220-3-1 PG-TO-247-3 Type SGP20N60HS SGW20N60HS Maximum Ratings Parameter Symbol VCE IC Value 600 36 20 Unit V A Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Avalanche energy single pulse IC = 20A, VCC=50V, RGE=25Ω start TJ=25°C Gate-emitter voltage static transient (tp

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SGP20N60HS

### 物料型号 - SGP20N60HS - SGW20N60HS

### 器件简介 这些器件是高速IGBT，采用NPT技术，与前一代产品相比，关断功耗（Eoff）降低了30%。短路承受时间为10微秒，设计用于30kHz以上的操作。

### 引脚分配 - SGP20N60HS: PG-TO-220-3-1 - SGW20N60HS: PG-TO-247-3

### 参数特性 - 最大额定值： - 集电极-发射极电压 (VCE): 600V - DC集电极电流 (Ic): 36A (Tc=25°C), 20A (Tc=100°C) - 脉冲集电极电流 (Icpuls): 80A - 关断安全工作区 (ip VcE 600V, T ≤150°C): 80A - 雪崩能量 (EAS): 115mJ - 栅极-发射极电压 (VGE): +20V ±30V - 短路承受时间 (tsc): 10us - 总功耗 (Ptot): 178W - 工作结和存储温度 (Tj, Tstg): -55...+150°C

- 热阻： - IGBT热阻，结-外壳 (RthJC): 0.7K/W - 热阻，结-环境 (RthJA): 62K/W (PG-TO-220-3-1), 40K/W (PG-TO-247-3)

- 电气特性（在Tj=25°C，除非另有说明）： - 集电极-发射极击穿电压 (V(BR)CES): 600V - 集电极-发射极饱和电压 (VcE(sat)): 2.8V (T=25°C), 3.15V (T=150°C) - 栅-发射门槛电压 (VGE(th)): 3V min., 5V max. - 零栅压集电极电流 (ICES): 40nA (T=25°C), 2500nA (T=150°C) - 栅-发射漏电流 (IGES): 100nA - 跨导 (gfs): 14S

- 动态特性： - 输入电容 (Ciss): 1100pF - 输出电容 (Coss): 105pF - 反向转移电容 (Crss): 64pF - 栅电荷 (QGate): 100nC - 内部发射极电感 (LE): 7nH (PG-TO-220-3-1), 13nH (PG-TO-247-3) - 短路集电极电流 (Ic(sc)): 170A

### 功能详解 这些IGBT设计用于高速开关应用，具有较低的关断功耗和良好的热稳定性。它们适用于600V的应用，具有并行开关能力和非常紧密的参数分布。

### 应用信息 这些IGBT适用于需要高速开关和较高耐压的应用，如工业控制系统、电动汽车和可再生能源技术。

### 封装信息 - SGP20N60HS: PG-TO-220-3-1 - SGW20N60HS: PG-TO-247-3

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