SGP20N60HS_09

SGP20N60HS_09

  • 厂商:

    INFINEON

  • 封装:

  • 描述:

    SGP20N60HS_09 - High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation - I...

  • 详情介绍
  • 数据手册
  • 价格&库存
SGP20N60HS_09 数据手册
SGP20N60HS SGW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • • • • G E PG-TO-220-3-1 PG-TO-247-3 High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant Qualified according to JEDEC1 for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V 600V IC 20 20 Eoff 240µJ 240µJ Tj 150°C 150°C Marking G20N60HS G20N60HS Package PG-TO-220-3-1 PG-TO-247-3 Type SGP20N60HS SGW20N60HS Maximum Ratings Parameter Symbol VCE IC Value 600 36 20 Unit V A Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Avalanche energy single pulse IC = 20A, VCC=50V, RGE=25Ω start TJ=25°C Gate-emitter voltage static transient (tp
SGP20N60HS_09
物料型号: - SGP20N60HS - SGW20N60HS

器件简介: - 高速IGBT,采用NPT技术,与前一代产品相比,关断偏置电压(Eoff)降低了30%。 - 短路承受时间为10微秒。 - 设计用于30 kHz以上的操作频率。 - NPT技术适用于600V应用,提供并行开关能力、温度升高时Eoff适度增加、非常紧密的参数分布。

引脚分配: - PG-TO-247-3G - PG-TO-220-3-1

参数特性: - 集电极-发射极电压(VCE):600V - DC集电极电流(IC):在25°C时为36A,在100°C时为20A - 脉冲集电极电流(IC,pulse):80A - 雪崩能量(EAS):115mJ - 栅极-发射极电压(VGE):静态瞬态(tp<1µs, D<0.05)为±20V至±30V - 功耗(Ptot):178W

功能详解: - 该IGBT具有高耐压、高耐温和高鲁棒性,无铅引线镀层,符合RoHS标准。 - 根据JEDEC标准,针对目标应用进行了资格认证。 - 提供完整的产品系列和PSpice模型。

应用信息: - 适用于需要高速开关和高耐压的应用场合,如工业控制、电力电子转换等。

封装信息: - PG-TO-247-3G和PG-TO-220-3-1封装,具有高耐温和高可靠性的特点。
SGP20N60HS_09 价格&库存

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