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SIDC06D60AC6

SIDC06D60AC6

  • 厂商:

    INFINEON

  • 封装:

  • 描述:

    SIDC06D60AC6 - Fast switching diode chip in EMCON 3 -Technology - Infineon Technologies AG

  • 数据手册
  • 价格&库存
SIDC06D60AC6 数据手册
SIDC06D60AC6 Fast switching diode chip in EMCON 3 -Technology FEATURES: • 600V EMCON 3 technology 70 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient A This chip is used for: • power module • discrete components Applications: • drives • white goods • resonant applications C Chip Type SIDC06D60AC6 VR 600V IF 20A Die Size 2.85 x 2 mm2 Package sawn on foil MECHANICAL PARAMETER: Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metallization Cathode metallization Die bond Wire bond Reject ink dot size Recommended storage environment 2.85 x 2 5.70 / 3.86 2.43 x 1.58 70 150 180 2574 pcs Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤500µm ∅ 0.65mm; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C µm mm deg mm 2 Edited by INFINEON Technologies, AIM PMD D CID CLS, L4981M, Edition 1.1, 10.07.2006 SIDC06D60AC6 Maximum Ratings Parameter Repetitive peak reverse voltage Continuous forward current limited by Tjmax Maximum repetitive forward current limited by Tjmax Operating junction and storage temperature 1) Symbol VRRM IF IFRM Tj , Ts t g Condition Value 600 1) Unit V A 40 -40...+175 °C depending on thermal properties of assembly Static Electrical Characteristics (tested on chip), Tj=25 °C, unless otherwise specified Parameter Reverse leakage current Cathode-Anode breakdown Voltage Forward voltage drop Symbol IR V Br VF Conditions V R = 600V I R = 0 . 2 5 mA I F= 2 0 A Tj= 2 5 ° C Tj= 2 5 ° C Tj= 2 5 ° C 600 1.25 1.6 1.95 Value min. Typ. max. 27 Unit µA V V Dynamic Electrical Characteristics ( verified by design/characterization), inductive load Parameter Peak reverse recovery current Symbol I F =20A Conditions T j = 2 5 °C Tj = 125 °C Tj = 150 °C T j = 2 5 °C Tj = 125 °C Tj = 150 °C T j = 2 5 °C Tj = 125 °C Tj = 150 °C Value min. Typ. 30.0 32.0 34.0 1.00 1.75 2.20 0.21 0.37 0.47 2) max. Unit IRM di/dt=1800A/ µ s V R =300V V GE = - 1 5 V I F =20A A Recovered charge Qr di/dt=1800A/ µ s V R =300V V GE = - 1 5 V I F =20A µC Reverse recovery energy E rec di/dt=1800A/ µ s V R =300V V GE = - 1 5 V mJ 2) values also influenced by parasitic L- and C- in measurement and package. Edited by INFINEON Technologies, AIM PMD D CID CLS, L4981M, Edition 1.1, 10.07.2006 SIDC06D60AC6 CHIP DRAWING: Edited by INFINEON Technologies, AIM PMD D CID CLS, L4981M, Edition 1.1, 10.07.2006 SIDC06D60AC6 FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet FS20R06VE3 Description: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies, AIM PMD D CID CLS, L4981M, Edition 1.1, 10.07.2006
SIDC06D60AC6 价格&库存

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