SIDC42D170E6_08

SIDC42D170E6 Fast switching diode chip in Emitter Controlled -Technology A Features: • 1700V technology, Emitter Controlled • soft, fast switching • low reverse recovery charge • small temperature coefficient This chip is used for: • power modules and discrete devices Applications: • SMPS, resonant applications, drives C Chip Type SIDC42D170E6 VR 1700V IF 50A Die Size 6.5 x 6.5 mm2 Package sawn on foil Mechanical Parameter Raster size Area total Anode pad size Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 6.5 x 6.5 42.25 4.48 x 4.48 200 150 339 Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, ≤500µm ∅ 0.65mm; max 1.2mm Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23°C µm mm mm 2 Edited by INFINEON Technologies, AIM PMD D CID CLS, L4241N, Edition 1.2, 28.0 7.2008 SIDC42D170E6 Maximum Ratings Parameter Repetitive peak reverse voltage Continuous forward current Maximum repetitive forward current Junction temperature range Operating junction temperature Dynamic ruggedness² 1) 2) Symbol V RRM IF I FRM T vj T vj P max Condition Tvj = 25 °C Tvj < 150°C Tvj < 150°C Value 1700 1) Unit V A °C °C kW 100 -40...+175 -40...+150 ) I F m a x = 1 00A, V R m a x = 1 700V Tvj ≤ 150°C tbd depending on thermal properties of assembly not subject to production test - verified by design/characterisation Static Characteristic (tested on wafer), Tvj = 25 °C Parameter Reverse leakage current Cathode -Anode breakdown Voltage Diode forward voltage Symbol IR V BR VF Conditions V R =17 0 0 V I R = 4m A I F= 5 0 A 170 0 2.15 Value m in. typ. max. 27 Unit µA V V Further Electrical Characteristic Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die. Edited by INFINEON Technologies, AIM PMD D CID CLS, L4241N, Edition 1.2, 28.0 7.2008 SIDC42D170E6 Chip Drawing A A: Anode pad Edited by INFINEON Technologies, AIM PMD D CID CLS, L4241N, Edition 1.2, 28.0 7.2008 SIDC42D170E6 Description AQL 0.65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies, AIM PMD D CID CLS, L4241N, Edition 1.2, 28.0 7.2008