SIDC46D170H

Preliminary SIDC46D170H Fast switching diode chip in EMCON 3 -Technology FEATURES: • 1700V EMCON 3 technology 200 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient A This chip is used for: • EUPEC power modules C Applications: • resonant applications, drives Chip Type SIDC46D170H VR 1700V IF 75A Die Size 6.8 x 6.8 mm2 Package sawn on foil Ordering Code Q67050-A4175A001 MECHANICAL PARAMETER: Raster size Area total / active Anode pad size Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metallization Cathode metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 6.8 x 6.8 46.24 / 34.04 4.78 x 4.78 200 150 180 304 pcs Photoimide 3200 nm Al Si Cu Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤500µm ∅ 0.65mm; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C µm mm deg mm 2 Edited by INFINEON Technologies AI PS DD HV3, L 4471A, Edition 1, 22.10.2001 Preliminary SIDC46D170H Maximum Ratings Parameter Repetitive peak reverse voltage Continuous forward current limited by Tjmax Single pulse forward current (depending on wire bond configuration) Symbol VRRM IF I FSM I FRM Tj , Ts t g Condition Value 1700 75 Unit V tP = 10 ms sinusoidal tbd 150 -55...+150 A Maximum repetitive forward current limited by Tjmax Operating junction and storage temperature °C Static Electrical Characteristics (tested on chip), Tj=25 °C, unless otherwise specified Parameter Reverse leakage current Cathode-Anode breakdown Voltage Forward voltage drop Symbol IR V Br VF Conditions V R= 1 7 0 0 V I R= 0 . 2 5 m A I F= 7 5 A Tj= 2 5 ° C Tj= 2 5 ° C Tj= 2 5 ° C 1700 1.8 Value min. Typ. max. 250 Unit µA V V Dynamic Electrical Characteristics, at Tj = 25 °C, unless otherwise specified, tested at component Parameter Reverse recovery time Symbol t rr1 t rr2 Peak recovery current IRRM1 IRRM2 Reverse recovery charge Qrr1 Qrr2 Peak rate of fall of reverse d i r r 1 /dt recovery current di r r 2 /dt Softness S1 S2 I F =75A d i/dt=- - - - A / µ s V R =- - - V I F =75A d i/dt=- - - - A / µ s V R =- - - V I F =75A di/dt=- - - - A / µ s V R =- - - V I F =75A di/dt=- - - - A / µ s V R =- - - V I F =75A di/dt=- - - - A / µ s V R =- - - V Conditions T j = 2 5 °C Tj = 125 °C T j = 2 5 °C Tj = 125 °C Tj= 2 5 ° C Tj= 1 2 5 ° C T j = 25 ° C Tj= 1 2 5 ° C Tj= 2 5 ° C Tj= 1 2 5 ° C Value min. Typ. tbd max. Unit ns tbd A tbd tbd µC tbd tbd A / µs tbd 1 Edited by INFINEON Technologies AI PS DD HV3, L 4471A, Edition 1, 22.10.2001 Preliminary SIDC46D170H CHIP DRAWING: Edited by INFINEON Technologies AI PS DD HV3, L 4471A, Edition 1, 22.10.2001 Preliminary SIDC46D170H FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet INFINEON TECHNOLOGIES / EUPEC tbd Description: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Strasse 53 D-81541 München © Infineon Technologies AG 2000 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies AI PS DD HV3, L 4471A, Edition 1, 22.10.2001