SIGC03T60SNC

SIGC03T60SNC IGBT Chip in NPT-technology FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling C This chip is used for: • IGBT Modules Applications: • drives G E Chip Type SIGC03T60SNC VCE 600V ICn 2A Die Size 1.78 x 1.78 mm2 Package sawn on foil Ordering Code Q67041-A3000A002 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 1.78 x 1.78 3.2 / 1.7 1.1 x 1.1 (L-shaped) 0.55 x 0.45 100 150 0 4900 Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al,