SIGC06T120CS

SIGC06T120CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling C This chip is used for: • SGP02N120 Applications: • drives, SMPS, resonant applications G E Chip Type SIGC06T120CS VCE 1200V ICn 2A Die Size 2.45 x 2.25 mm2 Package sawn on foil Ordering Code Q67050-A4115A001 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 2.45 x 2.25 5.512 / 2.5 1.03x1.29 0.42x0.56 180 150 0 2794 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C µm mm 2 mm deg Edited by INFINEON Technologies AI PS DD HV3, L 7251-S, Edition 2, 03.09.2003 SIGC06T120CS MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature 1) Symbol V CE IC Icpuls V GE Tj, Ts t g Value 1200 1) Unit V A A V °C 6 ±20 -55 ... +150 depending on thermal properties of assembly STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified: P arameter Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Symbol V(BR)CES VCE(sat) VGE(th) ICES IGES Conditions min. VGE=0V , IC=300µA VGE=15V, IC =2A IC =90µA , VGE=VCE VCE=1200V , VGE=0V VCE=0V , VGE=20V 1200 2.5 3.0 3.1 4.0 3.6 5.0 0.2 120 µA nA V Value typ. max. Unit DYNAMIC CHARACTERISTICS (tested at component): Parameter Input capacitance Output capacitance Reverse transfer capacitance Symbol Ci s s Co s s Cr s s Conditions V C E= 2 5 V , V GE= 0 V , f =1MHz Value min. typ. 205 28 17 max. 250 34 21 Unit pF SWITCHING CHARACTERISTICS (tested at component), Inductive Load: Parameter Turn-on delay time Rise time Turn-off delay time Fall time Symbol t d(on) tr td(off) tf Conditions* Tj= 2 5 ° C V C C =800V, I C =2A V GE= + 1 5 / 0 V , RG = 9 1 Ω 16 260 61 21 340 80 Value min. typ. 23 max. 30 Unit ns * switching conditions different to LowLoss, Standard, IGBT3; under comparable switching conditions 40% faster than Standard. Values also influenced by parasitic L- and C- in measurement and package. Edited by INFINEON Technologies AI PS DD HV3, L 7251-S, Edition 2, 03.09.2003 SIGC06T120CS CHIP DRAWING: Edited by INFINEON Technologies AI PS DD HV3, L 7251-S, Edition 2, 03.09.2003 SIGC06T120CS FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet SGP02N120 Package : TO220 Description: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies AI PS DD HV3, L 7251-S, Edition 2, 03.09.2003