SIGC06T60GS

SIGC06T60GS IGBT Chip FEATURES: • 600V Trench & Field Stop technology • low VCE(sat) • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module • discrete components Applications: • drives • white goods • resonant applications C G E Chip Type SIGC06T60GS VCE 600V ICn 10A Die Size 2.44 x 2.42 mm2 Package sawn on foil Ordering Code Q67050A4333-A101 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject ink dot size Recommended storage environment 2.44 x 2.42 1.558 x 1.577 0.361 x 0.513 5.9 / 3.6 70 150 270 2485 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al,