SIGC08T60S

SIGC08T60S IGBT Chip FEATURES: • 600V Trench & Field Stop technology • low VCE(sat) • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module • discrete components Applications: • drives • white goods • resonant applications C G E Chip Type SIGC08T60S VCE 600V ICn 15A Die Size 2.86 x 2.82 mm2 Package sawn on foil Ordering Code Q67050A4395-A101 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject ink dot size Recommended storage environment 2.86 x 2.82 2.014 x 2.014 0.361 x 0.513 8.0 / 5.2 70 150 0 1836 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al,