SIGC100T60R3

SIGC100T60R3 IGBT Chip Features: • 600V Trench & Field Stop technology • low VCE(sat) • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling This chip is used for: • power module Applications: • drives 3 C G E Chip Type SIGC100T60R3 VCE 600V IC 200A Die Size 9.73 x 10.23 mm2 Package sawn on foil Mechanical Parameter Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 9.73 x 10.23 ( 4.256 x 1.938 ) x 4 ( 4.256 x 2.356 ) x 4 1.615 x 0.817 99.5 70 150 126 Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al,