SIGC101T170R3

SIGC101T170R3 IGBT Chip FEATURES: • 1700V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC101T170R3 VCE 1700V ICn 75A Die Size 10.03 x 10.03 mm2 Package sawn on foil Ordering Code Q67050A4188-A001 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 10.03 x 10.03 8 x ( 3.82 x 1.75 ) 1.18 x 1.09 100.6 / 75.3 190 150 90 136 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al,