SIGC121T120R2C

SIGC121T120R2C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor This chip is used for: • power module BSM 75GD120DN2 Applications: • drives C G E Chip Type VCE ICn 75A Die Size 11.08 X 11.08 mm2 Package sawn on foil Ordering Code Q67041A4682-A003 SIGC121T120R2C 1200V MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 11.08 X 11.08 8 x ( 2.99 x 1.97 ) 1.46 x 0.8 122.8 / 99.6 200 150 90 106 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al,