SIGC12T60SNC

SIGC12T60SNC IGBT Chip in NPT-technology FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling C This chip is used for: • SGP10N60 Applications: • drives G E Chip Type SIGC12T60SNC SIGC12T60SNC VCE 600V 600V ICn 10A 10A Die Size 3.5 x 3.5 mm2 3.5 x 3.5 mm2 Package sawn on foil unsawn Ordering Code Q67041-A4664A001 Q67041-A4664A002 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 3.5 x 3.5 12.25 / 8.7 1.99 x 1.58 1.1 x 0.694 100 150 270 1219 Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C µm mm deg mm 2 Edited by INFINEON Technologies AI PS DD HV3, L 7222-S, Edition 2, 28.11.2003 SIGC12T60SNC MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature 1) Symbol V CE IC Icpuls V GE Tj, Ts t g Value 600 1) Unit V A A V °C 30 ±20 -55 ... +150 depending on thermal properties of assembly STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified: Parameter Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Symbol V(BR)CES VCE(sat) VGE(th) ICES IGES Conditions min. VGE=0V, IC =500µA VGE=15V, IC =10A IC =300µA, VGE=VCE VCE=600V, VGE=0V VCE=0V, VGE=20V 600 1.6 3 2 4 2.5 5 0.85 100 µA nA V Value typ. max. Unit DYNAMIC CHARACTERISTICS (tested at component): Parameter Input capacitance Output capacitance Reverse transfer capacitance Symbol Ci s s Co s s Cr s s Conditions V C E= 2 5 V V GE= 0 V f =1MHz Value min. typ. 580 70 50 max. 696 84 60 Unit pF SWITCHING CHARACTERISTICS (tested at component), Inductive Load: Parameter Turn-on delay time Rise time Turn-off delay time Fall time 2) Symbol t d(on) tr td(off) tf Conditions Tj= 1 5 0 ° C V C C =400V I C =10A V G E =+15/0V RG = 2 5 Ω 2) Value min. typ. 29 21 266 63 max. 35 25 319 76 Unit ns switching conditions different to 600V Standard IGBT 2, under comparable switching conditions 40% faster turnoff than Standard IGBT 2. Values also influenced by parasitic L- and C- in measurement and package. Edited by INFINEON Technologies AI PS DD HV3, L 7222-S, Edition 2, 28.11.2003 SIGC12T60SNC CHIP DRAWING: Edited by INFINEON Technologies AI PS DD HV3, L 7222-S, Edition 2, 28.11.2003 SIGC12T60SNC FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet SGP10N60 Package :TO220 Description: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies AI PS DD HV3, L 7222-S, Edition 2, 28.11.2003