SIGC156T120R2CL

SIGC156T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • low turn-off losses • positive temperature coefficient • easy paralleling • integrated gate resistor This chip is used for: • power module BSM100GD120DLC Applications: • drives C G E Chip Type VCE ICn Die Size 12.59 X 12.59 mm2 Package sawn on foil Ordering Code Q67041A4663-A003 SIGC156T120R2CL 1200V 100A MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 12.59 X 12.59 8 x ( 3.98 x 2.38 ) 1.46 x 0.8 158.5 / 132.6 180 150 90 82 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al,