SIGC158T170R3

SIGC158T170R3 IGBT Chip FEATURES: • 1700V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC158T170R3 VCE ICn Die Size 12.57 x 12.57 mm2 Package sawn on foil Ordering Code Q67050A4227-A101 1700V 125A MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 12.57 x 12.57 4 x ( 5.05 x 2.32 ) 4 x ( 5.05 x 2.54 ) 1.12 x 1.12 158 / 124.8 190 150 90 86 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al,