SIGC223T120R2CL

SIGC223T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • I GBT-Modules BSM150GB120DLC Applications: • drives C G E Chip Type VCE ICn Die Size 14.4 x 15.5 mm2 Package sawn on foil Ordering Code Q67050-A4286A101 SIGC223T120R2CL 1200V 150A MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 14.4 x 15.5 223.2 / 189.9 8x( 3.67x6.77 ) 1.49 x 1.51 180 150 90 54 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C µm mm deg mm 2 Edited by INFINEON Technologies AI PS DD HV3, L 7121-P, Edition 2, 03.09.2003 SIGC223T120R2CL MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature 1) Symbol V CE IC Icpuls V GE Tj, Ts t g Value 1200 1) Unit V A A V °C 450 ±20 -55 ... +150 depending on thermal properties of assembly STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified: Parameter Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Symbol V(BR)CES VCE(sat) VGE(th) ICES IGES Conditions VGE=0V , IC=8 mA VGE=15V, IC =150A IC =6mA , VGE=VCE VCE=1200V , VGE=0V VCE=0V , VGE=20V Value min. 1200 1.8 4.5 2.2 5.5 2.6 6.5 18.2 600 µA nA V typ. max. Unit DYNAMIC CHARACTERISTICS (tested at component): Parameter Input capacitance Output capacitance Reverse transfer capacitance Symbol Ci s s Co s s Cr s s Conditions V C E= 2 5 V , V GE= 0 V , f =1MHz Value min. typ. 11 0.7 max. Unit nF SWITCHING CHARACTERISTICS (tested at component), Inductive Load: Parameter Turn-on delay time Rise time Turn-off delay time Fall time 1) Symbol t d(on) tr td(off) tf Conditions 1) Tj= 1 2 5 ° C V C C =600V, I C =150A V GE= ± 1 5 V , R G = 5 . 6Ω Value min. typ. 50 50 570 40 max. - Unit ns values also influenced by parasitic L- and C- in measurement and package. Edited by INFINEON Technologies AI PS DD HV3, L 7121-P, Edition 2, 03.09.2003 SIGC223T120R2CL CHIP DRAWING: Edited by INFINEON Technologies AI PS DD HV3, L 7121-P, Edition 2, 03.09.2003 SIGC223T120R2CL FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet BSM150GB120DLC Half-Bridge 62mm Description: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies AI PS DD HV3, L 7121-P, Edition 2, 03.09.2003