SIGC25T120CS2

SIGC25T120CS2 IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling This chip is used for: • IGBT Modules Applications: • drives, SMPS, resonant applications C G E Chip Type SIGC25T120CS2 VCE 1200V ICn 15A Die Size 5.71 x 4.53 mm2 Package sawn on foil Ordering Code Q67050-A4197 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 5.71 x 4.53 2x (2.18 x 1.6) 1.09 x 0.68 25.9 / 18.7 180 150 270 555 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al,