SIGC39T60

SIGC39T60 IGBT Chip FEATURES: • 600V Trench & Field Stop technology • low VCE(sat) • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module • discrete components Applications: • drives C G E Chip Type SIGC39T60 VCE 600V ICn 75A Die Size 6.59 x 5.91 mm2 Package sawn on foil Ordering Code Q67050A4339-A101 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject ink dot size Recommended storage environment 6.59 x 5.91 ( 2.774 x 4.104 ) x 2 1.52 x 0.817 38.9 / 30 70 150 90 348 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al,